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Method for preparing silicon-based Micro OLED micro display device PDL through back etching

A micro-display device, silicon-based technology, which is applied in the manufacturing of semiconductor devices, electric solid-state devices, and semiconductor/solid-state devices, etc., can solve the problems of complicated preparation process and abnormal cathode pinch-off.

Pending Publication Date: 2021-09-10
ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of PDL by the traditional process is easy to cause abnormal cathode pinch off, and the preparation process is cumbersome

Method used

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  • Method for preparing silicon-based Micro OLED micro display device PDL through back etching
  • Method for preparing silicon-based Micro OLED micro display device PDL through back etching
  • Method for preparing silicon-based Micro OLED micro display device PDL through back etching

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Embodiment Construction

[0027] Below with reference to the accompanying drawings, through the description of the embodiments, the specific embodiments of the present invention, such as the shape, structure, mutual position and connection relationship between the various parts, the role and working principle of the various parts, etc., will be further described. Detailed instructions:

[0028] as attached figure 1 - attached Figure 4 As shown, the present invention is a method for preparing a silicon-based Micro OLED micro-display device PDL by engraving back, characterized in that: the steps of the method for preparing a silicon-based Micro OLED micro-display device PDL by engraving back are as follows: S1. Anode preparation process for wafers with CMOS circuits; S2. Perform PDL film formation process on the substrate that has completed the anode process; S3. Carry out back-engraving on the wafer that has completed the PDL film-forming process; S4. Clean the substrate that has completed the back-en...

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Abstract

The invention provides a method for preparing a silicon-based Mi cro OLED (Organic Light Emitting Diode) micro-display device PDL by back etching, which is applied to the technical field of micro-display devices. The method for preparing the silicon-based Mi cro OLED micro-display device PDL by back etching comprises the following steps: S1, carrying out an anode preparation process on a wafer with a CMOS (Complementary Metal Oxide Semiconductor) circuit; S2, carrying out a PDL film forming process on the substrate subjected to the anode process; S3, performing back etching on the wafer after the PDL film forming process is completed; S4, cleaning and baking the substrate subjected to the back etching process. The method for preparing the silicon-based Mi cro OLED micro display device PDL through back etching is simple in step, Si N or organic glue is selected as the PDL material, the inorganic PDL process and the organic PDL process are met, exposure and developing processes are not needed in the preparation process, the yield is improved, meanwhile, the production efficiency is greatly improved, and the production cost is reduced.

Description

technical field [0001] The invention belongs to the technical field of microdisplay devices, and more specifically relates to a method for preparing a silicon-based MicroOLED microdisplay device PDL by engraving back. Background technique [0002] At present, the market demand for silicon-based Micro OLED microdisplay devices is accelerating the improvement and optimization of its preparation process. In the traditional process, due to the constraints of the OLED film-forming process, when the angle of the anode is greater than 50°, the film will be formed unevenly at the channel, forming a film-forming angle. Due to both conductivity and transmittance, the cathode film layer is thin, so it is easy to break at the angle or the film layer is thin. The breakage directly leads to the failure of this part of the pixel to light up, forming dark spots, uneven film thickness, and easy resistance. Inhomogeneity, the device heats up seriously, and the pixel brightness is low, formin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/00
Inventor 曹贺刘晓佳吕迅刘胜芳赵铮涛潘倩倩
Owner ANHUI SEMICON INTEGRATED DISPLAY TECH CO LTD