Trench gate metal oxide semiconductor field effect transistor

Abstract

The invention discloses a trench gate metal oxide semiconductor field effect transistor. The field effect transistor comprises a field effect transistor main body, a grid electrode pin, a source electrode pin, a drain electrode pin, a heat conduction plate, a first insulation shell, a second insulation shell, a first protection shell, a second protection shell, a connecting groove, a connecting plate, a connecting screw hole, a connecting screw, a plate groove, a suspension plate, a positioning hole, a positioning column, a fixing seat, a pressing screw hole, a pressing screw, a pressing frame, a lug plate, a fixing hole, a rubber sleeve, a lead-out hole, a frame groove, a limiting frame, a locking screw hole, a locking screw, a heat dissipation plate, a heat conduction column and a column hole. By adopting a split type fixing mode, the field effect transistor is convenient to mount and dismount, the maintenance cost of the field effect transistor is reduced, unnecessary damage in the mounting and dismounting process is reduced, the mounting firmness and compression resistance of the field effect transistor are improved, the service life of the field effect transistor is prolonged, the heat dissipation performance of the field effect transistor is improved, and the working reliability of the field effect transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a trench gate metal oxide semiconductor field effect transistor. Background technique [0002] Field effect transistor, full name field effect transistor, is a semiconductor device that uses the electric field effect of the control input circuit to control the output circuit current. There are mainly two types of junction field effect transistors and metal oxide semiconductor field effect transistors. Current conduction, also known as unipolar transistor, is a voltage-controlled semiconductor device with high input resistance, low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, and wide safe working area And other advantages, it has become a strong competitor of bipolar transistors and power transistors. The trench gate metal oxide semiconductor field effect transistor is a new type of vertical structure field...

AI Technical Summary

Problems solved by technology

[0003] However, most of the traditional trench gate metal oxide semiconductor field effect transistors have the following problems: First, they are fixed on other devices by screws or welding, and it is difficult to disassemble after installation, which is time-consuming and laborious, which increases the maintenance of field effect transistors. cost, and unnecessary damage will be caused to the field effect tube and other devices during the installation and disassembly process, which reduces the firmness of the field effect tube installation; second, it is directly exposed to other devices without a protective structure. It is easy to be damaged by external force during the process, which inevitably shortens the service life of the field effect tube; thirdly, the heat dissipation performance is poor, and the problem of overheating and burning is easy to occur during use, which reduces the working reliability of the field effect tube, and there is a certain safety Hidden danger

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