Precursor composition for forming metal film, metal film forming method using same, and semiconductor device comprising same metal film

Abstract

The present invention relates to a precursor composition for forming a metal film, characterized by comprising a zirconium compound represented by any one of chemical formulas 1 to 3 and a hafnium compound represented by any one of chemical formulas 4 to 6.

Description

technical field [0001] The present invention relates to a precursor composition for forming a metal film, a method for forming a metal film using the above precursor composition, and a semiconductor element comprising the above metal film, in particular to a method of atomic layer deposition (ALD) or chemical vapor deposition ( A precursor composition for forming a metal film containing zirconium or hafnium used in a CVD process, a method for forming a metal film using the precursor composition, and a semiconductor element including the metal film. Background technique [0002] As precursors for atomic layer deposition (ALD) or chemical vapor deposition (CVD) engineering, organometallic compounds in various forms have been developed and used. Silicon oxide is the material mainly used in the manufacture of semiconductor elements such as dynamic random access memory (DRAM) and capacitors by applying the above-mentioned deposition function, but recently due to the demand for hi...

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Problems solved by technology

[0004] In the above-mentioned prior art, a zirconium-containing thin film and a hafnium-containing thin film are produced by applying a zirconium compound and a hafnium compound respectively, but there is no disclosure of a method for producing a zirconium-hafnium-containing thin film by using the above-mentioned zirconium compound and a hafnium compound in combination.

[0005] In addition, in U.S. Patent Publication No. 8,962,078, a hafnium cyclopentadiene compound as a precursor of hafnium and zirconium cyclopentadiene as a precursor of zirconium are disclosed, but none of the above prior art discloses Method for producing zirconium-hafnium thin film by combined use of compound and hafnium compound

[0006] In addition, the Republic of Korea Laid-Open Patent Publication No. 10-2017-0016748 relates to a method of forming a substance film using a first source material and a second source material different from each other, and as the source material, CpZr(NMe 2 ) 3 、Hf(O-t-Bu) 4 , Hf(NEt 2 ) 4 、Hf(NEtMe) 4 , Hf(NMe 2 ) 4 , TDMAH, etc., including hints related to the combined use of zirconium compounds and hafnium compounds, but did not specifically disclose the method of manufacturing zirconium-hafnium-containing thin films

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