8 results about "Hafnium compounds" patented technology

The invention relates to high-purity preparation of key metals, and discloses a production method of a high-purity hafnium compound, which comprises the following steps: S1, carrying out melting reaction on a hafnium-containing material, flux metal, zircon salt and a salt-containing material to obtain hafnium-containing molten salt; the smelting temperature during the melting reaction is 700-1250 DEG C, and the mass ratio of hafnium in the hafnium-containing material to zirconium in the zircon salt is greater than or equal to 2.0; the content of zirconium in the hafnium-containing molten salt is less than or equal to 0.5 wt%, and the content of hafnium is greater than or equal And S2, further separating the hafnium-containing molten salt obtained in the step S1 to obtain the high-purity hafnium compound. According to the method, the high-purity hafnium product can be prepared without repeated high-temperature fractionation or multi-stage extraction treatment, and the method has the advantages of being short in process, easy to operate and the like; the zirconium in the fused salt is removed, meanwhile, the problem of separation of zirconium and hafnium in the coarse zirconium salt is actually solved, and maximum utilization of the value of the raw materials is realized, so that the economic benefit of the process is better.

The invention relates to the technical field of metallurgy, and provides a method for extracting and separating hafnium and niobium. The method specifically comprises the following steps: carrying out extraction treatment on an extraction stock solution in an extraction agent, and carrying out separation treatment on an extraction treatment product so as to separate hafnium and niobium, wherein the extraction stock solution comprises a hafnium-containing compound to be separated, niobium to be separated and an acidity regulator. The method provided by the invention can effectively realize separation of hafnium and niobium, has the advantages of simplicity and convenience in operation, low energy consumption and smaller environmental harm, and is suitable for large-scale application.

A hafnium compound-containing sol-gel liquid contains an alcohol as a solvent and a hafnium compound as a hafnia source, in which the hafnium compound-containing sol-gel liquid contains one or two or more elements M selected from the group consisting of Zr, Ti, and Nb, a mass ratio WM / WHf of a content WM of the elements M to a content WHf of Hf as a metal component is within a range of 0.2% or more and 5.0% or less. A hafnia-containing film containing hafnia (HfO2) and one or two or more elements M selected from the group consisting of Zr, Ti, and Nb, and in which a mass ratio WM / WHfO2 of a content WM of the elements M to a content WHfO2 of the HfO2 is within a range of 0.05% or more and 5.0% or less.

The application relates to a method for preparing metallic hafnium by molten salt electrolysis, and belongs to the field of hafnium metallurgy. The method is implemented by using a molten salt electrolytic cell. Under the condition of power supply operation, a hafnium compound anode is consumed by an oxidation reaction and generates hafnium ions, and a reduction reaction occurs on the surface of a cathode and generates a metallic hafnium product. The application has the advantages of short process, good adaptability, easy synthesis of electrolytic raw materials, high product purity and the like.

The invention discloses an aluminum-doped oxide thin film and a preparation method thereof, relates to the technical field of preparation of nano thin film materials, and aims to solve the problems that in the prior art, a high-dielectric-constant material is easy to crystallize after high-temperature annealing, so that leakage current is increased, interface characteristics are degraded, and structural damage is caused by a plasma process. Comprising the following steps: carrying out alternate pulse conveying on a metal precursor at a preset process temperature; the metal precursor comprises a first metal precursor and a second metal precursor; the first metal precursor is a hafnium-containing compound, and the second metal precursor is an aluminum-containing compound; carrying out oxidation reaction on the metal precursor based on the oxygen-containing precursor, and sequentially generating a hafnium oxide sub-layer and an aluminum oxide sub-layer on the surface of the heating substrate; after hafnium oxide sublayer growth circulation is executed, aluminum oxide sublayer growth circulation is inserted once, and a hypercycle deposition structure is generated; and the hypercycle deposition is repeatedly executed until the target film thickness is reached, and the aluminum-doped hafnium oxide film is generated.

The invention belongs to the technical field of semiconductors, and particularly relates to a hafnium compound, a precursor composition containing the hafnium compound, a thin film and a preparation method of the hafnium compound. The hafnium compound contains phosphorus and silicon and can be used as a precursor of a hafnium oxide film. The doping of phosphorus and silicon can effectively inhibit the growth of hafnium oxide grains at high temperature. And the hafnium is segregated at the grain boundary of hafnium oxide, so that the uniformity of the film is higher. Meanwhile, oxygen vacancy and lattice strain are introduced by doping phosphorus, so that the formation of a monoclinic phase with a low K value is inhibited, and the film can be kept at a relatively high K value; according to the present invention, the Si-O bond is connected with the Hf-O bond to form a mixed and randomly connected Si-O-Hf amorphous network, such that the energy barrier required by crystallization is improved so as to improve the thermal stability of the Si-O-Hf amorphous network;

To provide a hafnium compound-containing sol-gel solution which enables the formation of a Hafnia-containing film especially superior in etching resistance, and a Hafnia-containing film formed by use of the hafnium compound-containing sol-gel solution.SOLUTION: A hafnium compound-containing sol-gel solution comprises: alcohol serving as a solvent; and a hafnium compound which makes a Hafnia source. The hafnium compound-containing sol-gel solution contains one or more elements M selected from Zr, Ti and Nb, in which the mass ratio WM / WHf of a content WM of the element M to a content WHf of Hf as metal components is within a range of 0.2% or more and 5.0% or less. A Hafnia-containing film contains: Hafnia (HfO2); and one or more elements M selected from Zr, Ti and Nb, in which the mass ratio WM / WHfO2 of a content WM of the element M to a content WHfO2 of the HfO2 is within a range of 0.05% or more and 5.0% or less.SELECTED DRAWING: None

This invention belongs to the field of semiconductor technology, specifically relating to a hafnium compound, a hafnium-containing thin film, its preparation method, and its applications. This invention provides a hafnium compound having the chemical formula shown in Formula 1, wherein R1, R2, and R3 are each independently selected from methyl, ethyl, propyl, or butyl, and R4, R5, R6, and R7 are each independently selected from H, methyl, ethyl, propyl, or butyl. This invention synthesizes a hafnium precursor compound with a specific structure through molecular design. Its molecular structure contains an alkyl thio group and a pyrrole ring, giving the hafnium precursor material high thermal stability, excellent reactivity, and low viscosity. Using this precursor to prepare thin films can significantly improve the quality and performance of the films.