46 results about "Hafnium compounds" patented technology

A method of making a superconducting structure includes depositing a metal alkoxide on a surface of a metal and hydrolyzing the metal alkoxide on the surface to form a pinhole-free film. The metal is a superconductor. The metal alkoxide may be a compound of formula (I):M4(OPrn)16  (I);where M is zirconium or hafnium, and the purity of the compound is at least 97% as measured by NMR spectroscopy.

The invention relates to a method for preparing C / SiC-HfC carbon fiber reinforced ultrahigh-temperature ceramic matrix composite, which comprises the following steps: introducing C organic precursor in C / SiC preform by vacuum pressure impregnation method or directly using C / C perform; combining with reaction melt impregnation method; and reacting silicon hafnium alloy with C to in-situ generate HfC-SiC. The obtained composite has high volume fraction of HfC; generated SiC and HfC have small grains to effectively improve the erosion resistance capability of materials. The method is applicable for composite, in site generates HfC phase in the process of preparing material and increases the volume fraction of hafnium compounds to enhance the erosion resistance capability.

The present invention provides a catalyst for olefin polymerization having high olefin polymerization activity without being accompanied by generation of an adhered polymer on the wall of a polymerization reactor and the wall of pipe line and generation of a locking massive polymer, and capable of manufacturing an olefin polymer industrially and stably for a long period of time. That is, the present invention related to a catalyst for olefin polymerization comprising [A1] a hafnium compound or a zirconium compound having at least one conjugated 5-membered ring ligand, [A2] a zirconium compound having at least one conjugated 5-membered ring ligand but different from [A1], and [B] phyllosilicate, and relates to a method of polymerizing or copolymerizing olefin in the presence of the catalyst.

The invention relates to a preparation method of a C / SiC-HfB2-HfC ultrahigh-temperature ceramics-based composite material. B4C and an organic precursor of C are introduced on a prefabricated body of a fiber reinforced composite material in a manner of vacuum pressure immersion method. A silicon-hafnium alloy is reacted with B4C and C to obtain SiC, HfB2 and HfC in situ with a reaction melt infiltration method. The material has good mechanical properties and contains various anti-ablation components. The obtained HfB2 and HfC are fine in grystal grains, are high in volume content and has effectively-improved anti-ablation performance. The material preparation method of the invention is suitable for a composite material. An HfC phase, a SiC phase and an HfB2 phase can be generated. The volume fraction of hafnium compound phases in a substrate is effectively increased and the anti-ablation performance at an ultrahigh-temperature environment of the material is improved.

A method of forming a gate insulation film 4 comprising a hafnium silicate material with a SiO2 equivalent oxide thickness of 1.45 nm or less on a silicon substrate 1 is disclosed. The method includes the steps of: cleaning a surface of the silicon substrate 1 to establish thereon a clean surface on which substantially no oxygen is present; forming a hafnium silicate film 2 on the clean surface of the silicon substrate 1 by a CVD process using an amide type organic hafnium compound and a silicon-containing raw material; applying an oxidation treatment to the hafnium silicate film 2, and applying a nitriding treatment to the hafnium silicate film 2 after applying the oxidation treatment. According to the method, a gate insulation film with favorable surface roughness can be obtained even if the film thickness is thin.

Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R1R2N)4 or Hf(OR3)4-n(R4)n and the content of Nb as an inevitable compound is 1 ppm or less.

The object of the present invention is to increase the crystallization temperature of a hafnium compound film which can be effectively used as a high dielectric constant film of a gate oxide film of a MOSFET, for example. A hafnium silicate film is deposited on a substrate by reacting a vapor of a hafnium organic compound with a monosilane gas or a disilane gas in a reaction vessel in a heated vacuum atmosphere. Due to the crystallization restraining effect of silicon, the thus obtained film has a higher crystallization temperature. In another embodiment of the present invention, an oxygen-containing hafnium compound film is annealed in a heated ammonia gas atmosphere. The annealing also increase the crystallization temperature of the oxygen-containing hafnium compound film.

The present invention provides a method for preparing ester or thioester that can conduct catalytic esterification reaction with an equimolar amount of carboxylic acid and alcohol, or catalytic thioesterification reaction with carboxylic acid and an equimolar amount or small amount of thiol, and can be expected as an industrial method that needs an enormous amount of synthesis in the light of green chemistry. By using hafnium chloride (IV), especially tetravalent hafnium compounds represented by hafnium chloride (IV)·(THF)2 or hafnium (IV)t-butoxide as a (poly) condensation catalyst, direct condensation reaction is conducted from carboxylic acid and an equimolar amount of alcohol or a little smaller amount of thiol, in the nonpolar solvent such as toluene and the like, in a deoxidization atmosphere and under heating reflux, and the reaction synthesizes ester monomer or thioester monomer, polyester or polythioester. When heating reflux is conducted by using a nonpolar solvent, it is preferable to remove azeotropic water from the reaction system.

This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

The invention provides a preparation method and application of an HfC ceramic precursor.The preparation method includes the steps of firstly, adding solvent into a reactor, adding organic hafnium compound and cyanamide organic matter, and vacuumizing and drying the reactor; secondly, rising the temperature, performing continuous stirring reaction under the protection of nitrogen atmosphere, and evaporating the reaction products to remove the solvent so as to obtain white solid.The HfC ceramic precursor prepared by the method is high in ceramic yield, good in high-temperature resistance and suitable for being used to prepare high-performance hafnium carbide ceramics and composite materials thereof, and the ultrahigh-temperature HfC component content of the ceramic materials prepared by the HfC ceramic precursor is higher than 79%.

The invention relates to a novel low-oxygen liquid SiHfBCN ceramic precursor and a preparation method thereof. A SiBCN precursor and a hafnium precursor are dissolved in an organic solvent to form a homogeneous solution, a free radical initiator is added, heating is performed to initiate a free radical polymerization reaction of double bonds between the two precursors, and heating or vacuumizing is performed to remove the solvent to obtain viscous liquid, namely a SiHfBCN ceramic precursor. After the SiHfBCN ceramic precursor is subjected to pyrolysis treatment, homogeneous SiHfBCN ceramic canbe obtained. According to the method, the problem of poor solubility of the hafnium precursor is solved, meanwhile, a silicon-hafnium-boron-carbon-nitrogen precursor is prepared through free radicalpolymerization of unsaturated bonds, introduction of an oxygen element is avoided, no byproduct is generated, the preparation process is simple, and the problem that a traditional refractory metal hafnium compound is high in preparation temperature and difficult to sinter is solved.

A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

Provided is an organic electroluminescent device which comprises an anode, a hole injection layer, a first hole transmission layer, a first luminescent layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second luminescent layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer. Material of the n-type layer is a fullerene derivative. Material of the intermediate layer is bipolar metal oxide doped with hafnium compounds. Material of the p-type layer is lanthanide oxide. The aforementioned organic electroluminescent device is relatively high in luminescence efficiency. The invention also provides a preparation method for the organic electroluminescent device.

The invention provides a large-batch high-pressure synthesis method of PCS. The method comprises the following steps: (1) placing a silicon-containing raw material and a catalyst in a stainless steelautoclave, replacing the gas in the autoclave with high-purity nitrogen, and sealing; (2) carrying out temperature programming on the temperature in the autoclave to reaction temperature, and after the reaction time, cooling to obtain a crude PCS product; (3) dissolving the crude PCS product with xylene, filtering and carrying out reduced pressure distillation on filtrate and then cooling to obtain PCS; the catalyst is an organometallic compound containing one or more of boron, aluminum, titanium, zirconium and hafnium, including but not limited to boron alkyl, alkoxy boron, aluminum alkyl, alkoxy aluminum, alkyl titanium, alkoxy titanium, titanium metallocene, alkyl zirconium, alkyl zirconium oxide, zirconium metallocene, alkyl hafnium, alkoxy hafnium, and hafnium compound; the reaction temperature is 400 to 450 DEG C; the pressure is 4 to 10MPa, the reaction time is 2 to 12 hours; and the volume of the autoclave is 50 to 10000L.

The present invention provides a new process for separating zirconium and hafnium compounds, in particular to remove traces of zirconium compounds from hafnium compounds, using fractional crystallisation, as well as hafnium compounds obtainable in accordance with this process.

Provided is an organic electroluminescent device which comprises an anode, a hole injection layer, a first hole transmission layer, a first luminescent layer, a first electron transmission layer, a charge generation layer, a second hole transmission layer, a second luminescent layer, a second electron transmission layer, an electron injection layer and a cathode which are laminated in turn. The charge generation layer comprises an n-type layer, an intermediate layer and a p-type layer. Material of the n-type layer is a fullerene derivative doped with caesium salt. Material of the intermediate layer is a metal doped with hafnium compounds. Material of the p-type layer is hole transmission material doped with bipolar metal oxide. The aforementioned organic electroluminescent device is relatively high in luminescence efficiency. The invention also provides a preparation method for the organic electroluminescent device.

The invention discloses an ethylene-bridged indenyl-fluorenyl zirconium (hafnium) compound as well as a preparation method and application thereof in oligomerization of propylene. The ethylene-bridged indenyl-fluorenyl zirconium (hafnium) compound can be obtained by virtue of firstly reacting an ethylene-bridged indenyl-fluorenyl ligand compound with an alkyl alkali metal in an organic medium and then adding ZrCl4 or HfCl4. The ethylene-bridged indenyl-fluorenyl zirconium (hafnium) compound disclosed by the invention is an efficient catalyst and has high catalytic activity when used for catalyzing oligomerization of propylene under relatively mild conditions and thus the propylene oligomer containing allyl end groups can be highly selectively obtained in the presence of an untreated alkyl aluminoxane co-catalyst; and meanwhile, the control of the molecular weight of the oligomer can be achieved by virtue of controlling polymerization conditions and the ethylene-bridged indenyl-fluorenyl zirconium (hafnium) compound has very high industrial application values and has the structure represented by the formula as shown in the specification.

The invention discloses a pyridine amine hafnium compound as well as a preparation method and application thereof. A framework of the pyridine amine hafnium compound is a tert-butyl-substituted pyridine amine hafnium compound, wherein tert-butyl with large steric hindrance is introduced to a bridging framework of the pyridine amine hafnium compound, and the structural formula of the pyridine amine hafnium compound is as shown in formula I, in which, the Ar can be phenyl or naphthyl. The pyridine amine hafnium compound can be used as a main catalyst to catalyze olefin polymerization, not only shows a single active center, but also shows very strong copolymerization ability. The compound can catalyze copolymerization of ethylene, alpha-olefin and polar monomers with high activity, so that a high-performance polyolefin material is prepared.

Disclosed is a hafnium compound which is in a liquid state at room temperature and has excellent stability. Also disclosed is a technique for stably forming a high-quality hafnium thin film for which a raw material can be stably supplied. Specifically disclosed is a hafnium thin film-forming material which is composed of a compound represented by the following general formula [I]: LHf(NR<1>R<2>)3 [I] In the formula, L represents a cyclopentadienyl group or a substituted cyclopentadienyl group, and R<1> and R<2> respectively represent an alkyl group. R<1> and R<2> may be the same as or different from each other.

This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

The invention relates to the field of chemical engineering, and particularly relates to a refining method of tetra (dimethylamino) hafnium. The method comprises the steps of firstly, carrying out refined adsorption on a tetra (dimethylamino) hafnium crude product by adopting surface grafting modified adsorption resin to remove a small amount of reaction raw material dimethylamine and a reaction byproduct n-butyl alcohol contained in the product, then firstly removing a trace amount of volatile impurities of residual reaction raw materials at low temperature by adopting a reduced pressure distillation mode, and then heating and distilling to obtain a high-purity product. The method has the advantages that the operation is simple, the equipment requirement is low, the investment is low, the prepared product has high purity, and the purity requirement on the tetra (dimethylamino) hafnium compound product in the electronic industry can be met.

The invention relates to the technical field of trace metal detection, in particular to an organic hafnium compound content detection pretreatment method which comprises the following steps: adding an organic hafnium compound mother solution into a digestion tank, and heating and concentrating to half in an open manner; cooling the concentrated product to room temperature, adding nitric acid and hydrogen peroxide into the concentrated product, heating, reacting and concentrating to be within 1 / 3 of the total volume, and cooling to room temperature; adding water into the treated product II, uniformly shaking, transferring to a constant volume into a volumetric flask, performing pretreatment on the sample solution to reduce the content of matrix substances in the sample solution, performing digestion through a system of nitric acid and hydrogen peroxide to destroy organic matters such as organic hafnium compounds in the sample solution so as to reduce background signal interference. The accuracy and the effectiveness of instrument testing are guaranteed, and meanwhile the analysis and detection requirements of various precise instruments such as ICP-MS, ICP-AES and AAS are met.

The invention discloses a pyridine amine hafnium compound, a preparation method thereof and application thereof in olefin polymerization reaction. The structural formula of the pyridine amine hafnium compound is shown as a formula I, R represents hydrogen and methyl, and X represents methyl, methoxyl, fluorine, chlorine and bromine elements. The pyridine amine hafnium compound can be used as a main catalyst to catalyze olefin polymerization, not only has high activity and strong orientation ability, but also shows very strong copolymerization ability and living polymerization performance, and can catalyze ethylene and alpha-olefin to obtain a high-performance polyolefin material.

A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.

The invention provides a hafnium compound which is in a liquid state at room temperature and has excellent stability. Also disclosed is a technique for stably forming a high-quality hafnium thin film for which a raw material can be stably supplied. Specifically disclosed is a hafnium thin film-forming material which is composed of a compound represented by the following general formula [I]: LHf(NR<1>R<2>)3[I] In the formula, L represents a cyclopentadienyl group or a substituted cyclopentadienyl group, and R<1> and R<2> respectively represent an alkyl group. R<1> and R<2> may be the same as or different from each other.

A method of producing a phthaloyl dichloride compound, the method including: providing a compound represented by the following formula (1) and a compound represented by the following formula (2); and bringing the compound represented by the following formula (1) and the compound represented by the following formula (2) into reaction, so as to form a compound represented by the following formula (3), in the presence of at least one compound selected from a zirconium compound, a hafnium compound, and zinc oxide;wherein, in formulae, X represents a hydrogen atom, a halogen atom, a nitro group, a methyl group, or a methoxy group; when the X is plural, Xs may be the same or different from each other; n represents an integer of from 0 to 2; R represents a halogen atom, a chlorocarbonyl group, a low carbon number alkyl group, or a halogen-substituted low carbon number alkyl group; when the R is plural, Rs may be the same or different from each other; and m represents an integer of from 0 to 2.

The present invention relates to a precursor composition for forming a metal film, characterized by comprising a zirconium compound represented by any one of chemical formulas 1 to 3 and a hafnium compound represented by any one of chemical formulas 4 to 6.