Etching composition and method for etching a substrate

Abstract

This etching composition for etching hafnium compound, includes a fluoride compound and a chloride compound. This method for etching a substrate, includes etching a film which contains hafnium compound and is formed on a substrate by using an etching composition, wherein the etching composition contains a fluoride compound and a chloride compound.

Description

Technical field [0001] The present invention relates to an etching composition for hafnium compounds such as hafnium silicate and hafnium aluminate. More specifically, it relates to an etching composition for etching an insulating film containing hafnium silicate and hafnium aluminate used in semiconductor devices, and A substrate etching method in which a substrate, particularly a film made of a hafnium compound formed on a silicon wafer, is etched. Background technique [0002] In recent years, with the rapid development of information technology, there is a trend to increase the speed of large integrated circuits (LSI, ULSI, VLSI) through miniaturization, high density, and high integration. Therefore, the use of new materials for semiconductor circuits is discussed. With the miniaturization, the insulating film is also becoming thinner, and the use of the silicon oxide insulating film originally used is restricted. Therefore, as a new insulating film, so-called high-k material...

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Problems solved by technology

However, since most of this etching solution is an organic solvent, it is easy to catch fire, and the semiconductor manufacturing equipment must have an explosion-proof structure, which is not ideal in industry.

[0005] Therefore, the best etchant for hafnium oxide, hafnium silicate, hafnium aluminate, etc. that can be sufficiently selected and processed as high-k materials that are attracting attention as semiconductors has not been seen yet.

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