LED epitaxial layer, growing method of current expansion layer of LED epitaxial layer, and LED chip

Abstract

The invention relates to an LED epitaxial layer, a growing method of a current expansion layer of the LED epitaxial layer, and an LED chip; when the current expansion layer is grown by using a nitrogen source and a basic source, aluminum atoms and / or gallium atoms in the basic source are desorbed by using atoms of a doping source through doping, so that the crystal quality of the current expansion layer is improved. Moreover, the basic source and the doping source are controlled to be alternately introduced, so that the formation of an atom transverse transfer diffusion channel can be facilitated, the atoms of the basic source have larger diffusion length on the surface of a basic crystal layer, and the two-dimensional layered growth characteristic in the current expansion layer is enhanced. Furthermore, the ratio of the transverse growth speed to the longitudinal growth speed is increased, so that the blade dislocation is bent and even annihilated, the blade dislocation density is further reduced, and the crystal quality is improved. Meanwhile, the alternate source introduction ensures that the atoms of the doping source have enough time to be adsorbed on the surface of the grown basic crystal layer, diffuse into the basic crystal layer and finally be uniformly distributed in the basic crystal layer, so that the desorption probability is improved.

Description

technical field [0001] The invention relates to the technical field of LED (Light Emitting Diode, light-emitting diode), and in particular, to a growth method of an LED epitaxial layer and a current spreading layer thereof, and an LED chip. Background technique [0002] AlGaN (aluminum gallium nitride)-based UV light-emitting diodes are a new type of solid-state UV light source. Compared with traditional UV mercury lamps, AlGaN-based UV LED chips have the advantages of small size, light weight, low power consumption, long life, environmental friendliness, and continuously adjustable light-emitting wavelengths. They are widely used in medical disinfection, water purification, etc. ground application. [0003] However, there are many difficulties in the preparation of AlGaN-based UV LED chips. For example, due to the high adsorption capacity of Al (aluminum) atoms, in epitaxial growth, Al atoms tend to occupy the initially adsorbed position, and it is difficult to continue to...

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in related technologies, the purpose of this application is to provide a method for growing an LED epitaxial layer and its current spreading layer, as well as an LED chip, aiming at solving the defects in the current AlGaN-based ultraviolet LED epitaxial layer crystals, which lead to AlGaN-based ultraviolet LED chips. poor quality problem

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