Vehicle-mounted SiC DCDC converter and new energy vehicle

Abstract

The invention provides a vehicle-mounted SiC DCDC converter, which comprises a shell, a cover body, and a reactor, a main control circuit board, a contactor circuit board and a thin film capacitor which are arranged in the shell, and also comprises at least one power device, at least one power device switching PCB, a laminated busbar, a driving circuit board and a spring vibrating needle, wherein the power device switching PCB is correspondingly arranged on the surface of the power device, pins of a grid electrode G and a source electrode S of the power device are welded with the power device switching PCB to form a first welding point, the position of the first welding point is transferred on a plane perpendicular to the pins through wiring on the power device switching PCB, the contact surface of the first welding point is enlarged through a bonding pad, and a bonding pad contact surface is formed; the laminated busbar is arranged above the power device switching PCB, and the source electrode S and a drain electrode D of the power device are welded with the laminated busbar to form a second welding point; the driving circuit board is arranged above the laminated busbar, and the driving circuit board is fixedly connected with the shell; and the tail end of the spring vibrating needle is welded on the driving circuit board and is arranged on the side, which is opposite to the laminated busbar, of the driving circuit board, and the head end with compression deformation of the spring vibrating needle is compressed by the driving circuit board and penetrates through the laminated busbar to be elastically pressed and connected to the contact surface of the bonding pad, so that elastic connection is realized.

Description

technical field [0001] The invention relates to the field of SiC DCDC converters, in particular to a vehicle-mounted SiC DCDC converter. Background technique [0002] At present, in the application of new energy vehicle DCDC converters, commonly used switching devices are mainly divided into two categories according to the semiconductor materials used: IGBT switching devices represented by Si semiconductor materials and SiC MOSFET power devices represented by SiC semiconductor materials. SiC power devices have the advantages of high blocking voltage, low on-state resistance, small switching loss, and high temperature resistance. Volume, weight, and noise; at the same time, the reduction of on-state loss and switching loss can further reduce the design difficulty and size and weight of the cooling plate of the DCDC converter, and realize the miniaturization, light weight, low noise, and high efficiency of the DCDC of the new energy vehicle. SiC power devices will become a tr...

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