Dry-wet combined maintenance method for process cavity of semiconductor film forming APCVD machine

A dry-wet combination, process chamber technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve problems such as semiconductor silicon wafer process defects, reduce defective scrap rate, ensure stability, increase The effect of dosage

Active Publication Date: 2021-10-01
上海中欣晶圆半导体科技有限公司
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Problems solved by technology

[0004] Aiming at the problems existing in the prior art, the present invention provides a method for maintaining the dry-wet combination of the process cavity of the semiconductor film-forming APCVD machine. Deposition) machine for efficient maintenance, so as to restore the machine to the clean environment before the process, greatly improve production efficiency and effectively solve the bad problems of the on-site semiconductor silicon wafer process

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  • Dry-wet combined maintenance method for process cavity of semiconductor film forming APCVD machine

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Embodiment Construction

[0022] The maintenance method of dry-wet combination of semiconductor film-forming APCVD machine process chamber, the specific steps are as follows:

[0023] First of all, prepare special maintenance equipment for maintenance, including: special nozzles for dry corrosion, special Teflon bellows, self-made brushes for cleaning, and special Teflon air pipes.

[0024] Wet corrosion: Lay a clean cloth on the floor in the process chamber of the machine, use multiple clean cloths to overlap and place them on the edges of both sides of the floor directly below the installation position of the special nozzle. Avoid splashing too much hydrofluoric acid during wet process, which will flow into the inside of the machine and corrode the machine. The plane between the process chambers of adjacent machines is paved with clean cloth. After wearing protective labor protection articles, pour hydrofluoric acid in an amount of 160 ml per square meter, so that the dust-free cloth contains a cert...

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Abstract

The invention discloses a dry-wet combined maintenance method for a process cavity of a semiconductor film-forming APCVD machine. The dry-wet combined maintenance method is mainly characterized in that a unique wet process is added in the earlier stage on the basis of common nitrogen and hydrofluoric acid corrosion dry purging, so that 70% of residual SiO2 powder deposited in the process cavity can be corroded by hydrofluoric acid in the wet process, and original dry etching is combined, in this way, the SiO2 powder deposited in the process cavity can be cleared away more thoroughly. The dry-wet combined maintenance method is pioneering for maintenance of the machine, and results are remarkable through repeated experiments.

Description

technical field [0001] The invention belongs to the field of film-forming processing of semiconductor silicon wafers, and in particular relates to a dry-wet maintenance method for a process cavity of a semiconductor film-forming APCVD machine. Background technique [0002] Usually, the semiconductor atmospheric pressure film forming process is to deposit a layer of polysilicon film on the surface of the silicon wafer through the chemical vapor deposition method and the thermal decomposition of silane in the process chamber under the normal pressure and high temperature state of the semiconductor silicon wafer. , after accumulating to a certain process time, a large amount of SiO will be deposited in the process chamber 2 These crystal particles will not only pollute the bottom cavity of the process chamber of the machine, but also make the nitrogen blowing on the bottom PURGE FLOOR (purification layer) floor of the process chamber of a machine like WAKTING-JOHNSON less The ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
CPCC23C16/4405C23C16/4407Y02P70/50
Inventor 翁剑峰贺贤汉
Owner 上海中欣晶圆半导体科技有限公司
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