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Photoelectric detector, arithmetic processor with memory function and preparation method

A photodetector and computing processor technology, applied in the field of detectors, can solve problems such as inability to perform logical operations on two pictures

Active Publication Date: 2021-10-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current neuromorphic vision sensor can improve the efficiency of image recognition and classification by improving image contrast and noise reduction, but it cannot perform image logic operations on two images and store the operation results in situ

Method used

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  • Photoelectric detector, arithmetic processor with memory function and preparation method
  • Photoelectric detector, arithmetic processor with memory function and preparation method

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preparation example Construction

[0050] The preparation method of MoxWySz alloy thin film of the present invention, described confinement oblique CVD method comprises the steps:

[0051] S1 Mix the tungsten source and NaCl in proportion, put them evenly on the precursor substrate, and place the precursor substrate in the quartz boat one; the preferred source of Wu is WO 3 .

[0052] In a preferred embodiment, WO 3 Mix with NaCl in a ratio of 10:1, place evenly on the precursor substrate, and place the substrate in a 1-inch quartz boat;

[0053] S2 places the molybdenum source and NaOH on the front end of the precursor substrate; the molybdenum source is preferably MoO 3 .

[0054] In a preferred embodiment, a molybdenum source and a trace amount of NaOH whose mass is half that of the tungsten source are placed on the front end of the precursor substrate;

[0055] S3 will be Si / SiO 2 The growth substrate is placed face down and obliquely above the precursor substrate; thereby achieving confinement; confin...

Embodiment 1

[0088] This embodiment provides a photodetector 1, such as figure 1 As shown, the photodetector 1 includes a substrate layer 11 and a photoresponsive layer 12 from bottom to top; wherein, the photoresponsive layer 12 is a defect-rich transition metal sulfide Mo x W 1-x S 2 Alloy thin film; an electrode layer 13 is set on the photoresponsive layer 12 .

[0089] Here, the material of the substrate layer 11 is a silicon wafer with a silicon oxide layer.

[0090] The material of the electrode layer 13 is Ti / Au, and the thickness is 5nm / 50nm.

[0091] The preparation process of the photodetector 1 is:

[0092] Step 1: Providing Si / SiO 2 Precursor substrates and Si / SiO 2 growth substrate;

[0093] Step 2: Put the WO 3 Mix with NaCl in a ratio of 10:1, place evenly on the precursor substrate, and place the substrate in a 1-inch quartz boat;

[0094] Step 3: Convert the mass to WO 3 half of MoO 3 and a trace amount of NaOH are placed on the front end of the precursor substr...

Embodiment 2

[0103] This embodiment provides an image logic operation processor unit with a memory function, such as figure 1 As shown, it includes a photodetector 1 and a comparator module 2, wherein the photodetector 1 sequentially includes a substrate layer 11 and a photoresponse layer 12 from bottom to top; wherein the photoresponse layer 12 is defect-rich Transition metal sulfide Mo x W 1-x S 2 Alloy thin film; an electrode layer 13 is set on the photoresponsive layer 12 . The comparator module 2 includes a voltage comparator 21 , a resistor 22 and a transimpedance amplifier 23 .

[0104] Here, the material of the substrate layer 11 is generally a silicon wafer with a silicon oxide layer.

[0105] The material of the electrode layer 13 is Ti / Au, and the thickness is 5nm / 50nm.

[0106] Described voltage comparator 21 is the general voltage comparator 21 that market is general, its reference voltage V ref For the preset voltage value Ref 1 or Ref 2 ( figure 2 ); the resistance v...

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Abstract

The invention discloses a photoelectric detector, an arithmetic processor with a memory function and a preparation method. The photoelectric detector sequentially comprises a substrate layer, a photoresponse layer and an electrode layer from bottom to top, wherein the photoresponse layer is a MoxWySz alloy film rich in defects; and the MoxWySz alloy film is prepared by promoting melting through sodium chloride. According to the invention, the photoresponse layer is arranged to be the defect-rich transition metal sulfide MoxWySz alloy film, so that the photoelectric detector has a continuous photoconductive effect; and by arranging a comparator module, an image logic arithmetic processor unit can execute logic operation. NaCl in the confinement inclined CVD method can promote fusion of MoS2 and WS2, so that the transition metal sulfide MoxWySz alloy film rich in defects grows, and the defects in the film can constrain photon-generated carriers, so that recombination of the photon-generated carriers is hindered.

Description

technical field [0001] The invention relates to the field of detectors, in particular to a photoelectric detector and an arithmetic processor. Background technique [0002] The development of artificial intelligence and the Internet of Things has emphasized the necessity of high computing efficiency and low power consumption computing processing. However, the traditional von Neumann architecture separates the memory and the computing unit, which leads to a communication bottleneck, the so-called "Von Neumann bottleneck". Bionic neuromorphic computing breaks this limitation by simulating the human brain on a physical level and can perform complex computing tasks. Since the human visual system perceives 80% of the information in the outside world, the ability to perceive and process visual information in real time becomes very important. However, most of the existing photodetectors can only perform photoelectric detection, but cannot store, and the pixel unit of the image se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/09H01L31/032H01L31/18G06T1/20
CPCH01L31/09H01L31/032H01L31/18G06T1/20Y02P70/50
Inventor 巫江杜文李彩虹龙自扬黄一轩
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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