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Chemical mechanical polishing method

A chemical mechanical and pre-polishing technology, applied in the direction of grinding machine tools, electrical components, circuits, etc., can solve the problem that the removal amount and thickness of silicon carbide wafers are difficult to maintain, and achieve the effect of improving the removal amount and thickness.

Inactive Publication Date: 2021-10-22
FUJIAN NORSTEL MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the chemical mechanical polishing method provided by the related art is difficult to keep the removal amount and thickness of the silicon carbide wafer consistent

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] 1. Provide a batch of incoming 4inch silicon carbide wafers. The number of wafers in each batch is 12 pieces. Use an electronic balance to weigh the weight M of the batch of silicon carbide wafers before polishing a And enter the ledger, the weight difference of the same batch is less than the preset upper limit;

[0081] 2. Set the preset time t on the chemical mechanical polishing machine according to experience 1 , and according to the preset time t 1 performing chemical mechanical polishing on the batch of silicon carbide wafers;

[0082] 3. After polishing the batch of silicon carbide wafers, weigh the weight M of the batch of silicon carbide wafers after polishing b , and entered into the ledger, according to the formula d=(M a -M b ) / k automatically calculates the removal amount, wherein, d is the removal amount, and k is the product of the wafer surface area and density;

[0083] 4. According to the preset time t 1 Calculate the removal rate of silicon car...

Embodiment 2

[0090] 1. Provide a batch of incoming 4inch silicon carbide wafers. The number of wafers in each batch is 10 pieces. Use an electronic balance to weigh the weight M of the batch of silicon carbide wafers before polishing a And enter the ledger, the weight difference of the same batch is less than the preset upper limit;

[0091] 2. Set the preset time t on the chemical mechanical polishing machine according to experience 1 , and according to the preset time t 1 performing chemical mechanical polishing on the batch of silicon carbide wafers;

[0092] 3. After polishing the batch of silicon carbide wafers, weigh the weight M of the batch of silicon carbide wafers after polishing b , and entered into the ledger, according to the formula d=(M a -M b ) / k automatically calculates the removal amount, wherein, d is the removal amount, and k is the product of the wafer surface area and density;

[0093] 4. According to the preset time t 1 Calculate the removal rate of silicon car...

Embodiment 3

[0100] 1. Provide a batch of incoming 4inch silicon carbide wafers. The number of wafers in each batch is 16 pieces. Use an electronic balance to weigh the weight M of the batch of silicon carbide wafers before polishing a And enter the ledger, the weight difference of the same batch is less than the preset upper limit;

[0101] 2. Set the preset time t on the chemical mechanical polishing machine according to experience 1 , and according to the preset time t 1 performing chemical mechanical polishing on the batch of silicon carbide wafers;

[0102] 3. After polishing the batch of silicon carbide wafers, weigh the weight M of the batch of silicon carbide wafers after polishing b , and entered into the ledger, according to the formula d=(M a -M b ) / k automatically calculates the removal amount, wherein, d is the removal amount, and k is the product of the wafer surface area and density;

[0103] 4. According to the preset time t 1 Calculate the removal rate of silicon car...

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PUM

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Abstract

The invention relates to the technical field of semiconductors, in particular to a chemical mechanical polishing method, which comprises the following steps of: weighing the weight of a batch of incoming wafers before polishing; performing chemical mechanical polishing on the incoming wafers according to preset time; weighing the weight of the incoming wafers after polishing, and calculating the removal amount of the incoming wafers according to the weight of the incoming wafers before polishing and the weight of the incoming wafers after polishing; calculating the removal rate of the incoming wafers according to the preset time and the removal amount of the incoming wafers; and according to the removal rate of the incoming wafers and the target removal amount of the next batch of incoming wafers, calculating the polishing time required by the next batch of incoming wafers. According to the chemical mechanical polishing method disclosed by the invention, the problem that the removal amount and the thickness of silicon carbide wafers are difficult to keep consistent can be solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chemical mechanical polishing method. Background technique [0002] The third-generation wide-bandgap semiconductor material silicon carbide (SiC) has excellent characteristics such as large critical breakdown electric field strength, high thermal conductivity, large saturated electron drift rate, and good thermal stability. It can overcome the disadvantages of traditional semiconductors and enable devices to It is a key material for making high-temperature, high-voltage, high-frequency, and high-power electronic devices to work normally under harsher conditions, so it has broad application prospects and important research significance. SiC wafer processing is a crucial step for its application in various fields, among which chemical mechanical polishing (CMP) is an important means to achieve local and global planarization of wafers and obtain high-quality SiC polished w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04H01L21/306H01L21/66
CPCB24B37/042H01L21/30625H01L22/12H01L22/26
Inventor 崔凯张洁
Owner FUJIAN NORSTEL MATERIAL TECH CO LTD
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