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Silicon optical chip end face coupling structure resistant to high input optical power

An end-face coupling, silicon optical chip technology, applied in the directions of light guides, optics, optical components, etc., can solve the problems of large nonlinear loss of silicon waveguides, increase coupled optical power, and decrease in transmittance, and achieve low coupling loss and reduction. The effect of low loss and thermo-optic coefficient

Pending Publication Date: 2021-10-26
NANO BEIJNANO TECH (BEIJING) CO LTDING PHOTONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the coupled optical power is large, the silicon waveguide will produce a large nonlinear loss, resulting in a decrease in transmittance; further increasing the coupled optical power, even leads to irreversible damage to the silicon waveguide
Generally speaking, silicon-based end-face couplers can withstand low optical power, and generally can withstand optical power <19dbm, 80mW. For the application scenarios of silicon-based integrated chips that require high input optical power, such as lidar, silicon-based The end-face coupling scheme of the end-face coupler is no longer applicable

Method used

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  • Silicon optical chip end face coupling structure resistant to high input optical power
  • Silicon optical chip end face coupling structure resistant to high input optical power
  • Silicon optical chip end face coupling structure resistant to high input optical power

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Embodiment Construction

[0032] The following description and drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely represent possible variations. Individual components and functions are optional unless explicitly required, and the order of operations may vary. Portions and features of some embodiments may be included in or substituted for those of other embodiments.

[0033] like Figure 1-10 As shown, in some illustrative embodiments, a silicon-optical chip end-face coupling structure resistant to high input optical power is provided, which can realize high optical power input and multiple outputs on a silicon-based optical chip, including: an end-face coupling unit 10. The first connection unit 40 , the power splitting unit 20 , the second connection unit 50 , the conversion unit 30 , and the third connection unit...

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Abstract

The invention provides a silicon optical chip end face coupling structure resistant to high input optical power, which can realize high optical power input and multi-path output on a silicon-based optical chip, and comprises an end face coupling unit, a first connecting unit, a power beam splitting unit, a second connecting unit, a conversion unit and a third connecting unit. Compared with a silicon-based end face coupler, the coupler can bear higher input optical power; the method is compatible with an existing silicon-based semiconductor manufacturing process, and low-cost manufacturing and large-scale production are facilitated; loss between the optical fiber and the silicon-based optical waveguide is reduced; and the conversion unit can be coupled with a silicon-based device, the coupling loss is very low, and large-scale integration with a silicon optical chip is easy to realize.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integration, and in particular relates to a silicon optical chip end face coupling structure with high input optical power resistance. Background technique [0002] For the commercial application of silicon photonics integration, one of the key challenges is to achieve low-loss optical coupling between optical fibers and silicon optical chips, especially the optical coupling between standard single-mode optical fibers, that is, SMF-28, and silicon optical chips. So far, various end-face couplers based on silicon have been proposed, and the coupling loss of a single end face can reach 2-3dB, but when coupled with a single-mode fiber, it still faces the problem of large absorption loss. [0003] In addition, silicon materials have strong second-order nonlinear absorption coefficients, including two-photon absorption (TPA, Two-photonabsorption) and TPA-induced free-carrier absorption (FCA, free...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/122G02B6/125G02B6/124
CPCG02B6/1228G02B6/125G02B6/124G02B2006/12035G02B2006/12147G02B2006/1215G02B2006/12152G02B2006/12154
Inventor 马可刘亚东蔡鹏飞潘栋蘇宗一
Owner NANO BEIJNANO TECH (BEIJING) CO LTDING PHOTONICS