Equipment suitable for resistivity measurement pretreatment of silicon epitaxial wafer

Abstract

The invention provides equipment suitable for resistivity measurement pretreatment of a silicon epitaxial wafer. The equipment comprises a device body, an equipment inner wall, a reaction chamber, a quartz frame, electrodes, an air inlet, an air outlet and an induction coil, the equipment inner wall is located in the device body, the reaction chamber is located in the equipment inner wall, the induction coil is located on the outer side of the equipment inner wall, the electrode is located in the reaction chamber and is oppositely arranged, the quartz frame is arranged in the electrode, the air inlet is located in one side of a negative electrode of the electrode, the air outlet is located in one side of a negative electrode of the electrode, and the air outlet is positioned on one side of the positive electrode of the electrode. The equipment has the beneficial effects that the surface of the epitaxial wafer is treated by using the high-activity oxygen plasma so as to destroy unstable Si-X miscellaneous bonds (-X can be any possible unstable or unnecessary bond type), so that stable silicon-oxygen bonds are obtained.

Description

technical field [0001] The invention relates to the field of epitaxial wafer growth, in particular to a device suitable for pretreatment of silicon epitaxial wafer resistivity measurement. Background technique [0002] Epitaxial growth refers to the process of growing and depositing a layer of single crystal or polycrystalline structure on the substrate; with the improvement of process requirements, the importance of epitaxial process in the field of high-performance independent device and integrated circuit manufacturing is increasing day by day. Therefore, high-standard testing of epitaxial products is an essential part of determining the quality of epitaxial processes. [0003] The substrate is usually a very thin disc-shaped cylinder, and its common materials are silicon (Si), silicon carbide (SiC), sapphire (Al 2 o 3 ), etc., whose conventional diameter is an integer between 2 inches and 12 inches (inclusive). [0004] The epitaxial layer is also called the depositio...

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Problems solved by technology

[0008] 4PP is a non-destructive test, but it can only measure the resistivity of the epitaxial layer of heterogeneous epitaxy; the SRP method is a destructive test, and does not distinguish between homoepitaxial and heterogeneous epitaxy; MCV method is a non-destructive test, and does not distinguish between homogeneous epitaxy epitaxy or heteroepitaxy

[0014] Finally, using oxygen (O 2 ) reacts with ultraviolet light to generate ozone (O 3 ) in the method of surface treatment, both ultraviolet rays and ozone have great harm to the human body, and leakage caused by careless operation may cause accidents to cause industrial injuries and other injury events

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