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Al BONDING WIRE

A technology of bonding wire and al alloy, applied in welding equipment, welding medium, welding/cutting medium/material, etc., can solve the problems of difficult use and easy softening of wires, and achieve the effect of ensuring the reliability of bonding

Pending Publication Date: 2021-10-26
NIPPON STEEL CHEMICAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of using a material composed of only high-purity Al as an Al bonding wire, the wire tends to soften in such a temperature environment, so it is difficult to use it in a high-temperature environment

Method used

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  • Al BONDING WIRE
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] An Al alloy containing 0.5% by mass of Fe was prepared, the alloy was made into an ingot, and the ingot was groove-rolled and wire-drawn. Heat treatment is performed at the stage where the wire diameter is 800 μm. Thereafter, die wire drawing was performed with the final wire diameter set to the wire diameter shown in Table 1, and quenching and tempering heat treatment was performed after the wire drawing was completed. The heat treatment conditions in the wire drawing process are to set the standard conditions as 620 ℃, 3 hours, rapid cooling (water cooling), a part does not carry out heat treatment (comparative example 3), and the cooling conditions are set as slow cooling (air cooling) (comparative Example 4). In addition, the tempering heat treatment conditions after wire drawing were to set the standard conditions at a range of 270±10° C. for 10 seconds, and set a part at a temperature lower than the standard (Comparative Example 1) and a temperature higher than t...

Embodiment 2

[0066] Al bonding wires having wire compositions shown in Table 2 and having a wire diameter of 200 μm were produced. The production conditions and evaluation items are the same as those in Example 1 above. The results are shown in Table 2.

[0067] [Table 2]

[0068]

[0069] It can be seen from Table 2 that any wire component can obtain the wire structure of the present invention, and can achieve good wire quality.

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Abstract

Provided is an Al bonding wire with which sufficient bond reliability can be obtained at bonding wire bond portions in high temperature states at which a semiconductor device using the Al bonding wire is operated. The Al bonding wire is characterized in that: the Al bonding wire comprises Al or an Al alloy; the average crystal grain size in a core material cross section in the direction perpendicular to the wire axis is 0.01-50[mu]m; and a crystal orientation <111> angled at 15 degrees or less with respect to the longitudinal direction of the wire makes up a proportion of 30-90% of crystal orientations in the wire longitudinal direction according to the results of crystal orientation measurements performed on a core material cross section in the direction perpendicular to the wire axis.

Description

technical field [0001] The present invention relates to Al bonding wires. Background technique [0002] In a semiconductor device, electrodes formed on a semiconductor element and electrodes on a lead frame or a substrate are connected by bonding wires. As materials used for bonding wires, gold (Au) or copper (Cu) is used in integrated circuit semiconductor devices such as super LSI, while aluminum (Al) is mainly used in power semiconductor devices. For example, Patent Document 1 shows the use of An example of an aluminum bonding wire (hereinafter referred to as "Al bonding wire"). Also, in a power semiconductor device using an Al bonding wire, wedge bonding is used as a bonding method for connection to electrodes on a semiconductor element and connection to electrodes on a lead frame or a substrate. [0003] Power semiconductor devices using Al bonding wires are often used as large power equipment such as air conditioners and solar power generation systems, and as semic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60
CPCH01L2224/45124C22C21/00B23K35/0227B23K35/286C22F1/04H01L24/45H01L2224/45015H01L24/43H01L2224/43848H01L2224/05624H01L2224/85439H01L24/05H01L24/85H01L2924/386C22C21/02H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/01026H01L2924/01029H01L2924/00014B23K2101/40H01L2224/05124H01L2224/05147H01L2224/43986B23K20/004B23K20/005B23K20/007
Inventor 山田隆西林景仁榛原照男小田大造江藤基稀小山田哲哉小林孝之宇野智裕
Owner NIPPON STEEL CHEMICAL CO LTD