CMOS fully-integrated electromagnetic detection radio frequency front-end sensor

Abstract

The invention discloses a CMOS fully-integrated electromagnetic detection radio frequency front-end sensor, which comprises a Hall sensor, a rotating current circuit, an instrument operational amplifier, a low-pass filter and a clock processing circuit, and is characterized in that the rotating current circuit is used for eliminating electromagnetic induction imbalance of the Hall sensor; the instrument operational amplifier is used for improving the load capacity of the circuit; the low-pass filter is used for realizing RC low-pass filtering of the circuit; and the clock processing circuit is used for outputting a high-level non-overlapped waveform clock, so that the influence caused by simultaneous conduction of the switches in the rotating current circuit is prevented. The CMOS technology is adopted, full integration of electromagnetic sensing is achieved, the sensor can be inserted between channels on the premise that the radio frequency performance is not affected, the chip area is not increased, cost is saved, and detection of the electromagnetic intensity between radio frequency front-end circuits is achieved.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a CMOS fully integrated radio frequency front-end sensor for electromagnetic detection. Background technique [0002] In the RF front-end system, system stability is a problem that designers need to consider. However, in actual use, the interference between channels caused by chip signal leakage is an important factor affecting the RF system indicators. Transmit signal leakage from the PA can interfere with the receive signal, degrading the channel isolation of the RF receiver system. This problem will affect the performance of the chip during the use of the chip. In traditional RF chip testing, the use of needles and probe stations is too complicated and expensive. In order to solve the complex problem of isolation detection in the traditional radio frequency system, the present invention designs an integrated electromagnetic sensor circuit by using CMOS technology, and con...

AI Technical Summary

Problems solved by technology

This problem will affect the performance of the chip during the use of the chip

In traditional RF chip testing, the use of needles and probe stations is too complicated and costly

In order to solve the complex problem of isolation detection in the traditional radio frequency system, the present invention designs an integrated electromagnetic sensor circuit by using CMOS technology, and converts the detection of current into the detection of electromagnetic, which can realize a small power power consumption and area, to achieve lower cost

[0003] Using a bipolar process to design an integrated circuit has the advantages of low noise and low offset voltage, but when eliminating the offset voltage caused by transistor mismatch, the structure of the external signal processing circuit of the Bipolar sensor is not simple, which makes the chip The area increases, resulting in high production costs, and bipolar processes usually have logic functions that are difficult to implement

The CMOS process has the advantages of high integration and low power consumption, so that the CMOS sensor can realize more functions, which is more suitable for the needs of market development. However, in the process of designing integrated circuits using CMOS process, there will be more Obvious shortcomings, such as the offset voltage and noise of the CMOS Hall sensor are relatively serious, the effective Hall signal is easily affected by it, which seriously affects the performance of the Hall sensor, and the sensitivity of the Hall sensor based on the CMOS process is obviously low It is based on the Hall sensor manufactured by the bipolar process, and the sensitivity is a particularly important parameter to measure the performance of the Hall sensor. When the sensitivity is not high, the output accuracy of the Hall sensor is not good when detecting weak magnetic field changes. High, so that the application of the Hall sensor is significantly reduced

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