Deep ultraviolet LED chip and manufacturing method thereof

Abstract

The invention discloses a deep ultraviolet LED chip and a manufacturing method thereof, and the deep ultraviolet LED chip comprises an epitaxial structure which is provided with a first surface and a second surface which are opposite to each other, the epitaxial structure comprises a P-type semiconductor layer, an N-type semiconductor layer and a multi-quantum well layer clamped between the P-type semiconductor layer and the N-type semiconductor layer, and the P-type semiconductor layer is exposed on the first surface of the epitaxial structure; and a hole compensation layer of the P-type semiconductor layer is located on the first surface of the epitaxial structure. According to the deep ultraviolet LED chip, the hole compensation layer of the P-type semiconductor layer is utilized to ensure that the P-type semiconductor layer obtains relatively high hole concentration, and meanwhile, the absorption of an internal structure of the deep ultraviolet LED chip to deep ultraviolet light is reduced.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and more specifically, to a deep ultraviolet LED chip and a manufacturing method thereof. Background technique [0002] In the deep ultraviolet LED chip (Light-Emitting Diode, light-emitting diode), in order to make the P-type semiconductor layer obtain better ohmic contact effect and higher hole concentration, it is necessary to grow another layer of p- on the P-type semiconductor layer. The GaN layer, however, the p-GaN layer will absorb a large amount of deep ultraviolet light, which seriously affects the light emission of the deep ultraviolet LED chip. Although the absorption of deep ultraviolet light can be reduced by thinning the p-GaN layer, the hole concentration will be significantly reduced. [0003] Therefore, it is necessary to improve the deep ultraviolet LED chip and its manufacturing method, hoping to reduce the absorption of deep ultraviolet light by...

AI Technical Summary

Problems solved by technology

[0002] In the deep ultraviolet LED chip (Light-Emitting Diode, light-emitting diode), in order to make the P-type semiconductor layer obtain better ohmic contact effect and higher hole concentration, it is necessary to grow another layer of p- on the P-type semiconductor layer. The GaN layer, however, the p-GaN layer will absorb a large amount of deep ultraviolet light, which seriously affects the light emission of the deep ultraviolet LED chip

Although the absorption of deep ultraviolet light can be reduced by thinning the p-GaN layer, the hole concentration will be significantly reduced

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