Method for manufacturing semiconductor element

Abstract

The invention discloses a method for manufacturing a semiconductor element. The method comprises the steps: providing a semiconductor substrate having an NMOS region, a PMOS region, and a non-silicided metal region; respectively forming an NMOS transistor and a PMOS transistor in the NMOS region and the PMOS region; forming a stress memory layer to cover the NMOS region, the PMOS region and the non-silicification metal region; removing the stress memory layer from the PMOS region; transferring the stress from the stress memory layer to the N channel of the NMOS transistor; removing the stress memory layer from the NMOS region, but leaving the stress memory layer within the non-silicified metal region; carrying out a self-aligned silicification metal manufacturing process, and forming silicification metal layers in the NMOS region and the PMOS region.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a method for manufacturing semiconductor elements. Background technique [0002] It is known that Stress Memorization Technology (SMT, Stress Memorization Technology) is usually used in the semiconductor manufacturing process after the source / drain (S / D) ion implantation step to induce stress on metal oxide semiconductor field effect transistors ( MOSFET) channel area. [0003] In the traditional SMT manufacturing process, stress layer deposition and laser annealing are usually used to induce stress in the substrate, that is, the polysilicon gate located under the stress layer is recrystallized by laser annealing, thereby improving the N-channel metal oxide semiconductor field effect. The electrical properties of transistors (NMOSFET, hereinafter referred to as NMOS). The aforementioned stress layer will be removed before the subsequent self-align...

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Problems solved by technology

However, the above-mentioned SMT manufacturing process and self-aligned metal silicide manufacturing process require multiple depositions and etchings, and the steps are relatively complicated.

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