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Semiconductor film

A semiconductor and solution technology, which is applied in the field of α-Ga2O3 series semiconductor films, can solve the problems of crystal defects and single crystal substrates not being practical.

Pending Publication Date: 2021-11-05
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, α-Ga 2 o 3 It is a metastable phase. Therefore, single crystal substrates have not been practically used, and are usually formed on sapphire substrates by heteroepitaxial growth.
However, in this case, it is known to contain a large number of crystal defects due to the difference in lattice constant with sapphire

Method used

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  • Semiconductor film
  • Semiconductor film

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Embodiment Construction

[0018] semiconductor film

[0019] The semiconductor film of the present invention has 2 o 3 or α-Ga 2 o 3 It is a corundum crystal structure composed of solid solution. α-Ga 2 o 3 It belongs to the crystal group of the trigonal crystal system and has a corundum crystal structure. In addition, α-Ga 2 o 3 A solid solution is a solid solution of other components in α-Ga 2 o 3 The obtained substance maintained the corundum type crystal structure.

[0020] α-Ga of the present invention 2 o 3 The semiconductor film has different impurity concentrations and / or out-of-phase amounts on the front and back. Accordingly, it is possible to manufacture a semiconductor film having a significantly lower density of crystal defects reaching the film surface. The crystal defect density in the surface of the semiconductor film on the side where the impurity concentration is low and / or the amount of different phases is small is preferably 1.0×10 6 / cm 2 Below, more preferably 4....

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Abstract

Provided is a semiconductor film that has very few crystal defects and exhibits high breakdown field properties. This semiconductor film has a corundum-type crystal structure formed of alpha-Ga2O3 or an alpha-Ga2O3 solid solution, and the front surface and the back surface of the semiconductor film have different impurity concentrations and / or amounts of a heterogeneous phase.

Description

technical field [0001] The present invention relates to a semiconductor film, in particular to α-Ga having a distribution of impurity concentration and / or out-of-phase amount 2 o 3 Department of semiconductor film. Background technique [0002] In recent years, gallium oxide (Ga 2 o 3 ) has attracted attention as a semiconductor material. It is known that gallium oxide has five crystal forms of α, β, γ, δ and ε, among which α-Ga, which is a metastable phase 2 o 3 The band gap is very large, as high as 5.3eV, and it is expected to be used as a material for power semiconductor devices. [0003] For example, Patent Document 1 (Japanese Unexamined Patent Application Publication No. 2014-72533) discloses a semiconductor device comprising: a base substrate having a corundum crystal structure, a semiconductor layer having a corundum crystal structure, and a substrate having a corundum crystal structure. insulating film, and recorded the formation of α-Ga on a sapphire substr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16H01L21/20H01L21/363H01L21/365
CPCC30B29/16H01L21/0242H01L21/02488H01L21/02565H01L21/0262H01L21/02631H01L21/02581H01L29/04H01L29/24
Inventor 渡边守道福井宏史
Owner NGK INSULATORS LTD