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Single crystal graphene and preparation method thereof

A single crystal graphene, graphene technology, applied in the field of graphene, can solve the problems of graphene performance quality decline, slow growth rate, etc., to achieve the effect of consistent orientation

Active Publication Date: 2021-11-09
BEIJING GRAPHENE INST +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, among the growth methods developed by using the above-mentioned graphene growth strategy, the first method tends to have a slow growth rate, and its efficiency will limit the enlargement of the graphene preparation process; although the second method grows and prepares graphene The speed has been greatly improved, but there are still cases where a small number of domains are not fully oriented, which leads to the introduction of some grain boundaries, resulting in a decline in the performance and quality of graphene

Method used

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  • Single crystal graphene and preparation method thereof
  • Single crystal graphene and preparation method thereof

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preparation example Construction

[0019] refer to figure 1 , one embodiment of the present invention provides a method for preparing single-crystal graphene, comprising preparing single-crystal graphene by a chemical vapor deposition process; wherein, the chemical vapor deposition process includes the following steps:

[0020] S1: Formation of aligned graphene nuclei on a substrate in a system that does not contain a reducing gas; and

[0021] S2: Continue to grow under the action of reducing gas to form single crystal graphene.

[0022] In the present invention, "single crystal graphene" means a single layer of graphene without grain boundaries.

[0023] In the present invention, in step S1, nucleation is performed on the substrate by chemical vapor deposition; wherein, "nucleation" refers to the formation of small islands of graphene from the cracked carbon species after the introduction of the carbon source.

[0024] In one embodiment, the reducing gas is hydrogen.

[0025] In one embodiment, hydrogen ga...

Embodiment 1

[0079] The preparation of single crystal graphene includes the pretreatment process of the substrate and the growth process of graphene, and the two processes are carried out in the same reactor, that is, the substrate does not move during the preparation process.

[0080] Substrate pretreatment

[0081] 1) Place copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) in a phosphoric acid glycol solution for electrochemical polishing. The mass concentration of phosphoric acid is 85%, and the volume ratio of phosphoric acid to ethylene glycol is 3:1 , the polishing current density is maintained at about 100A / m 2 , the polishing time is about 30min; the polished copper foil is rinsed with deionized water and blown dry with nitrogen.

[0082] 2) Put the above-mentioned polished copper foil in a casing with magnetic control, and put the casing in a large quartz tube of a tube furnace, and raise the temperature to an annealing temperature of 1020° C....

Embodiment 2

[0088] The raw materials and process conditions used in this embodiment are basically the same as in Example 1, the difference is that in step S1, the argon flow is 1500 sccm, the methane flow is 0.5 sccm, and the growth time (reaction time) is 30s; in step S2, The flow rate of argon gas is 1000 sccm, the flow rate of hydrogen gas is 500 sccm, the flow rate of methane gas is 0.5 sccm, and the growth time is 20 min.

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Abstract

The invention provides a preparation method of single crystal graphene. The single crystal graphene is prepared through a chemical vapor deposition process. The chemical vapor deposition process comprises the following steps of: S1, in a reaction system which does not contain reducing gas, forming a graphene core on a substrate; and S2, under the action of a reducing gas, forming the single crystal graphene on the basis of the graphene core. According to the preparation method of the single crystal graphene provided by one embodiment of the invention, a reducing gas is not used in a graphene core forming stage, so that the orientation of a graphene core is completely regulated and controlled by a single crystal substrate, and consistent orientation is realized.

Description

technical field [0001] The invention relates to graphene, in particular to a single crystal graphene and a preparation method thereof. Background technique [0002] Graphene is a carbon atom by sp 2 The single-layer or few-layer two-dimensional crystal material formed by hybridization has excellent electrical, optical and mechanical properties. Since it was discovered, it has been widely paid special attention to by the scientific and industrial circles. During the growth process of graphene, if the lattice orientations between different domains are not perfectly consistent, but deviate at a certain angle, line defects will be generated after splicing, which is what we call grain boundaries. The existence of grain boundaries will have adverse effects on the properties of graphene, including decreased electrical mobility, reduced mechanical strength, and reduced thermal conductivity. Therefore, the preparation of large-sized, grain-boundary-free single-crystal graphene is ...

Claims

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Application Information

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IPC IPC(8): C30B29/02C30B25/00
CPCC30B29/02C30B25/00
Inventor 刘忠范刘海洋孙禄钊李杨立志王悦晨
Owner BEIJING GRAPHENE INST
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