Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon carbide MOSFET device and manufacturing method thereof

A manufacturing method and technology of silicon carbide, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of inability to achieve precise control of channel length, reduce on-resistance, etc., and achieve easy control of channel length, Effect of short channel

Active Publication Date: 2021-11-09
HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method still cannot achieve the purpose of precisely controlling the length of the channel and further reducing the on-resistance.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide MOSFET device and manufacturing method thereof
  • Silicon carbide MOSFET device and manufacturing method thereof
  • Silicon carbide MOSFET device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0026] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. Also, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, or region.

[0027] If it is to describe the situation directly on another layer or anothe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon carbide MOSFET device and a manufacturing method thereof. The method comprises the following steps: forming an epitaxial layer on a first surface of a substrate; forming a source region in the epitaxial layer; forming a body region in the epitaxial layer; forming a gate structure on the first surface of the epitaxial layer, wherein the gate structure comprises a gate dielectric layer, a gate conductor and an interlayer dielectric layer; forming an opening in the interlayer dielectric layer to expose the surface of the source region; and forming the source contact on the surface of the interlayer dielectric layer and connected with the source region through the opening, wherein the transverse extension range of the body region is larger than that of the source region by means of dip angle control of ion implantation, so that a transversely-extending channel is formed in the portion, located on the periphery of the source region, of the body region, and at least a portion of the gate conductor is over the channel. According to the manufacturing method of the silicon carbide MOSFET device, the length of the channel is accurately controlled by adjusting the incident angle and the incident energy of the whole region during ion implantation, so that the short channel is realized, and the on-resistance is reduced.

Description

technical field [0001] The invention relates to the technical field of self-aligned silicon carbide MOSFET devices, in particular to a silicon carbide MOSFET device and a manufacturing method thereof. Background technique [0002] Silicon carbide (SiC) material has excellent physical and electrical properties. With its unique advantages such as wide band gap, high thermal conductivity, large saturation drift velocity and high critical breakdown electric field, it has become a high-power, high-power It is an ideal semiconductor material for high-frequency, high-voltage, high-temperature-resistant, and radiation-resistant devices, and has broad application prospects in military and civil affairs. Silicon carbide MOSFET devices have the advantages of fast switching speed and small on-resistance, and can achieve a high breakdown voltage level at a small drift layer thickness, reduce the volume of the power switch module, and reduce energy consumption. , Converters and other app...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L21/265
CPCH01L29/66068H01L29/7802H01L21/047H01L29/1608H01L29/1095Y02B70/10
Inventor 陈辉
Owner HANGZHOU SILICON-MAGIC SEMICON TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com