Semiconductor transistor and preparation method thereof

Abstract

The invention provides a transistor and a preparation method thereof. The transistor is provided with a semiconductor channel layer on a substrate, a high-k gate dielectric layer is arranged on the channel layer, a gate structure is formed on the high-k gate dielectric layer, the gate structure comprises two side walls and a gate dielectric layer located in the two side walls, the width of the high-k gate dielectric layer is greater than that of the gate structure, and a source electrode and a drain electrode are respectively formed on the semiconductor on two sides of the gate structure and the high-k gate dielectric part exceeding the gate structure. According to the transistor, the device structure of energy band distribution of the semiconductor transistor, especially a narrow-band-gap semiconductor transistor, is optimized, off-state current and static energy consumption can be restrained by regulating and controlling the energy bands of the source end and the drain end, the transistor can be compatible with an industrialized semiconductor technology, and large-scale integrated preparation can be achieved.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a transistor with a channel layer of a new non-silicon semiconductor material and a manufacturing method thereof. Background technique [0002] As semiconductor integrated circuit technology continues to shrink down to a technology node below 3nm, silicon-based integrated circuits may reach the limits of silicon materials and physical quantum mechanics. With the continuous development of the electronics industry, there is an urgent need to find new materials with more potential and advantages to extend silicon materials and break through the limit of Moore's Law. Carbon nanotubes (CNTs) have high carrier mobility, long mean free path, and nanoscale diameter, which can be used to build faster, lower power consumption, and smaller nanoscale field effect transistors. , so carbon nanotubes (CNTs) electronics are considered to be one of the future informati...

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Problems solved by technology

The existing semi-self-aligned feedback gate process still has many shortcomings. The above-mentioned process is still limited to the laboratory process, which is not compatible with the current integrated circuit industry process, cannot be mass-produced, and cannot be carried out on a technology node with a size smaller than 90nm. implementation, there are difficulties in scaling-down

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