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Semiconductor wafer defect detection equipment and detection method

A defect detection and semiconductor technology, which is applied in semiconductor/solid-state device testing/measurement, semiconductor/solid-state device manufacturing, optical testing flaws/defects, etc., can solve problems such as wafer characteristics and detection effects are not clear enough, and imaging cannot be achieved. Reduced equipment cost, improved reliability, and high detection efficiency

Pending Publication Date: 2021-11-19
武汉中导光电设备有限公司
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Problems solved by technology

[0003] After the current wafer inspection equipment completes the scan, it usually only has the inspection results under a single imaging condition, or cannot complete the imaging under different conditions in one scan
At the same time, there are differences in the number and position of defect points (including false detection defect points or missed detection defect points) detected under different imaging conditions, resulting in unclear wafer characteristics and detection effects

Method used

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  • Semiconductor wafer defect detection equipment and detection method
  • Semiconductor wafer defect detection equipment and detection method
  • Semiconductor wafer defect detection equipment and detection method

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Embodiment Construction

[0046] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, but not all of them. Based on the embodiments in the present application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present application.

[0047] The embodiment of the present application provides a semiconductor wafer defect detection device, which has a method (function) capable of selecting an imaging detection method with an optimal channel combination to detect defects on the wafer.

[0048] figure 1 It is a schematic structural diagram of a semiconductor wafer defec...

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Abstract

The invention relates to the technical field of wafer detection, and in particular relates to semiconductor wafer defect detection equipment and a detection method. The semiconductor wafer defect detection equipment provided by the invention comprises a detection platform on which a wafer to be detected is placed; the detection equipment further comprises an imaging device which comprises an industrial camera, an optical head and an imaging light source, the optical head is arranged at the front end of the industrial camera, the industrial camera is used for collecting a scanning image of the surface of the wafer, and the optical head is used for carrying out scanning imaging on the surface of the wafer; the detection equipment further comprises a wafer transmission device which is used for transmitting the wafer to the detection platform; the detection equipment further comprises a control device which is used for controlling the detection platform and the imaging device and constructing different imaging detection modes, so that the imaging light source provides illumination for the surface of the wafer according to the set imaging detection mode; the detection equipment further comprises an image processing device which is used for receiving the scanned image, carrying out defect detection on the scanned image, and then selecting an optimal imaging detection mode from different imaging detection modes according to an analysis result of defect detection.

Description

technical field [0001] The present application relates to the technical field of wafer detection, in particular to a semiconductor wafer defect detection device and detection method. Background technique [0002] Wafer refers to the wafer used to make silicon semiconductor circuits, and its raw material is usually silicon. High-purity polycrystalline silicon is dissolved and mixed with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. After the silicon ingot is ground, polished, and sliced, it forms a silicon wafer, that is, a wafer. In the wafer fabrication process, a series of processes such as single crystal pulling, slicing, grinding, polishing, layer buildup, photolithography, doping, heat treatment, and scribing may cause defects on the wafer surface. In order to prevent defective wafers from flowing into the packaging process, it is necessary to use optical inspection equipment to identify wafer surface defects and classif...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/88G06T7/00H01L21/67H01L21/66
Inventor 李波王建存
Owner 武汉中导光电设备有限公司
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