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Heterojunction infrared photoelectric sensor and preparation method thereof

A photoelectric sensor, electrical sensor technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low detection and responsivity, low dark current, limited weak light sensing applications, etc., to improve sensitivity and detection. The effect of improving the efficiency of separation and transmission, promoting collection and transmission,

Pending Publication Date: 2021-11-19
SHANDONG NORMAL UNIV
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  • Description
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Problems solved by technology

The reported photoconductive infrared photoelectric sensing devices based on a single material generally have a large dark current and a small photocurrent, resulting in low detection and responsivity of the device, which severely limits the ability of weak light and small photons. However, due to the transfer behavior of the majority carriers on the interface, P-type SnSe and N-type Ge can form a p-n junction with excellent performance, which is conducive to improving the photogenerated load of the device under infrared light irradiation. flow separation ability

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  • Heterojunction infrared photoelectric sensor and preparation method thereof
  • Heterojunction infrared photoelectric sensor and preparation method thereof
  • Heterojunction infrared photoelectric sensor and preparation method thereof

Examples

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Embodiment 1

[0028] This embodiment introduces a heterojunction infrared photoelectric sensor.

[0029] Such as figure 1 and figure 2 The heterojunction infrared photoelectric sensor shown uses a photoelectric sensor based on Cu / SnSe / Ge / In-Ga heterojunction; the SnSe / Ge heterojunction is used as the light-absorbing active layer, and the crystal thin film of SnSe and Ge It has a high absorption of infrared light, and forms an electric field at the interface of the SnSe / Ge heterojunction, which helps the rapid separation of photogenerated carriers inside the device, thereby significantly improving the formation of photocurrent and reducing the reverse The saturation current intensity improves the ability of the device to detect weak light; the Cu microgrid structure is used as the top electrode to form an ohmic contact with the SnSe crystal film, which is beneficial to the collection and transmission of photogenerated holes; the In-Ga alloy or In The crystal thin film of Ge acts as the bo...

Embodiment 2

[0035] This example introduces a preparation method of a heterojunction infrared photoelectric sensor.

[0036] Using an N-type single crystal Ge substrate with a resistivity of 1.0-5.0 Ω cm and a thickness of 100-200 μm as a substrate, the Ge crystal substrate is cleaned sequentially in detergent, alcohol, acetone, and alcohol solutions using ultrasonic cleaning equipment. slice for 30min, then pass through dry nitrogen (N 2 ) to dry the substrate to obtain a Ge substrate with a clean surface. Subsequently, using the physical vapor deposition (PVD) method, using high-purity (99.999%) SnSe powder as the growth source, a layer with a thickness of about 70nm and a resistivity of about 2.20×10 3 Ω·cm P-type layered SnSe crystal film, thereby preparing a SnSe / Ge heterojunction with an electrical rectification ratio of up to 200; during the growth process, the evaporation growth temperature is 600°C, the working pressure is 25Pa, and the working gas is argon (Ar), the flow rate i...

Embodiment 3

[0039] This example introduces a preparation method of a heterojunction infrared photoelectric sensor.

[0040] Using an N-type single crystal Ge substrate with a resistivity of 1.0-5.0 Ω cm and a thickness of 100-200 μm as a substrate, the Ge crystal substrate is cleaned sequentially in detergent, alcohol, acetone, and alcohol solutions using ultrasonic cleaning equipment. slice for 30min, then pass through dry nitrogen (N 2 ) to dry the substrate to obtain a single crystal Ge substrate with a clean surface. Using the method of magnetron sputtering, a high-purity (99.999%) SnSe target is used as a sputtering source, and a layered SnSe crystal film with a thickness of 70nm is sputtered on a Ge substrate; the diameter of the target is 50.8mm , the sputtering power is 50W, the working pressure is 10Pa, the working gas is argon (Ar), the flow rate is 50 sccm, and the sputtering time is controlled at about 20 minutes. Subsequently, using a rapid annealing furnace, in high-purity...

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Abstract

The invention provides a heterojunction infrared photoelectric sensor and a preparation method thereof. The heterojunction infrared photoelectric sensor is characterized in that aphotoelectric sensor of a heterojunction based on Cu / SnSe / Ge / In-Ga is adopted; an SnSe / Ge heterojunction is used as a light absorption active layer, and an electric field is formed at the interface of the SnSe / Ge heterojunction; the micro-grid structure of Cu is used as a top electrode, and forms ohmic contact with an SnSe crystal film; and an In-Ga alloy or In crystal film is used as a bottom electrode, and forms ohmic contact with a Ge crystal substrate. According to the invention, conversion from an infrared optical signal to an electrical signal is achieved under irradiation of infrared light so as to achieve rapid identification of the infrared light, and weak optical signals can be sensed, so that the problem that an existing infrared sensor generally has small optical current and large dark current is solved so as to improve the identification sensitivity and detection degree of the infrared sensor.

Description

technical field [0001] The disclosure belongs to the technical field of photoelectric materials and devices, and in particular relates to a heterojunction infrared photoelectric sensor and a preparation method thereof. Background technique [0002] The statements in this section merely provide background information related to the present disclosure and do not necessarily constitute prior art. [0003] Sensors are the bottom layer and the forefront of the Internet of Things technology, and the primary link to realize automatic detection and automatic control, which is of great significance to the development of the Internet of Things industry. Therefore, with the wave of emerging "sensing technologies" such as intelligent identification and mobile Internet, the infrared sensor industry has also ushered in a huge opportunity for development, and the scale of market demand has rapidly expanded. However, the current infrared sensors on the market generally have disadvantages s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0336H01L31/0224H01L31/18
CPCH01L31/109H01L31/0336H01L31/022408H01L31/18Y02P70/50
Inventor 张洪宾陆佳俊佀国翔吕绍艳程瑞杉徐彦彩李娇孙硕齐
Owner SHANDONG NORMAL UNIV
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