Graphene/TiO2 nanopillar array Schottky junction ultraviolet photodetector and manufacturing method thereof
A technology of nano-column arrays and electrical detectors, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of being unable to withstand high temperature and corrosive environments, less ultraviolet light detectors, and rare applications of nanomaterials, and achieve superior performance , Large specific surface area, uniform size effect
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[0030] see figure 1 , the graphene / TiO of this embodiment 2 The nanopillar array Schottky junction ultraviolet photodetector has the following structure:
[0031] TiO is grown on the upper surface of FTO glass 1 2 Nanopillar array 2, TiO 2 The nanopillar array uses FTO as the ohmic contact electrode; in TiO 2 The top of the nanopillar array 2 is provided with TiO 2 The nanocolumn array 2 is a graphene film 3 in Schottky contact, and an extraction electrode 4 in ohmic contact with the graphene film is drawn out from the graphene film 3 .
[0032] Among them: TiO 2 Nanopillar arrays for n-type TiO 2 ; The graphene film is an intrinsic graphene film prepared by CVD method. The thickness of the FTO glass used is 2.2mm, the light transmittance is greater than 90%, and the surface resistance is 14Ω.
[0033] Graphene / TiO of the present embodiment 2 The preparation method of the nanocolumn array Schottky junction ultraviolet photodetector is to carry out as follows:
[0034...
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