IGBT device and preparation method thereof
A technology for devices and doped regions, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of slow switching speed of IGBT devices, improve switching speed, solve electric field concentration, and reduce switching capacitance and conduction. The effect of pressure drop
Pending Publication Date: 2021-11-23
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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[0003] Based on this, it is necessary to propose a new IGBT device and its preparation method in view of the technical problem of slow switching speed of the current IGBT device
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[0038] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. A preferred embodiment of the application is shown in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.
[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associa...
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The invention relates to an IGBT device and a preparation method thereof. The device comprises a drift region, a body region, a first doped region, a second doped region, a trench, a filling structure, an expansion region, an emitter lead-out structure and a gate lead-out structure, wherein the body region is formed in the drift region; the first doped region and the second doped region are formed in the body region; the trench sequentially penetrates through the first doped region and the body region and extends into the drift region; the filling structure comprises an oxide layer which is formed on the side wall of the trench and is not formed at the bottom of the trench, and a first conductive structure and a second conductive structure which are filled in the trench and are mutually isolated, and the bottom depth of the first conductive structure is greater than that of the second conductive structure; the expansion region is formed in the drift region below the trench and is in contact with the first conductive structure; the emitter lead-out structure is in contact with the first doped region and the second doped region; the grid lead-out structure is in contact with the second conductive structure; and the drift region and the first doped region have a first conductive type, and the body region, the second doped region and the extension region have a second conductive type. By forming the expansion region surrounding the bottom of the trench, the switching speed of the IGBT device can be improved.
Description
technical field [0001] The present application relates to the field of semiconductors, in particular to an IGBT device and a preparation method thereof. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) device is a bipolar device, which combines the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) and bipolar transistor The working mechanism has the advantages of reduced conduction voltage, high voltage resistance and low power consumption. However, limited by the excess carriers in the drift region in the on-state, the switching speed of the IGBT device is slow. Contents of the invention [0003] Based on this, it is necessary to propose a new IGBT device and its preparation method in view of the technical problem of the current slow switching speed of the IGBT device. [0004] An IGBT device comprising: [0005] a drift region having a first conductivit...
Claims
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IPC IPC(8): H01L29/06H01L29/40H01L29/739H01L21/331
CPCH01L29/7398H01L29/7397H01L29/66348H01L29/0684H01L29/0623H01L29/407H01L29/40H01L29/739H01L29/66234H01L29/06
Inventor 肖魁卞铮胡金节方冬邓小社芮强朱琳
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD