Silicon substrate GaN processing technology

Abstract

The invention discloses a silicon substrate GaN processing technology which specifically comprises the following steps: S1, epitaxially obtaining GaN on a silicon substrate through MOCVD, and carrying out mechanical grinding to flatten the surface of the GaN; S2, depositing an oxide layer on the surface of the silicon substrate; S3, bonding the silicon substrate on the large-size Si-based carrier plate; S4, completing the front wafer manufacturing process of GaN; S5, bonding the front surface of the GaN with a glass support plate; S6, etching to remove an oxide layer on the surface of the silicon substrate so that the silicon substrate and the Si-based support plate are de-bonded; S7, removing the silicon substrate through mechanical grinding and thinning; and S8, completing the manufacturing process of the GaN back wafer. According to the method, the SiO2 layer is deposited on the surface of the silicon substrate, and permanent bonding can be formed by the SiO2 layer and Si to bond the silicon substrate on the large-size Si-based carrier plate, so that small-size GaN processing is carried out by using existing silicon wafer processing equipment, and meanwhile, the stress problem of epitaxial GaN of the silicon substrate is solved.

Description

technical field [0001] The invention relates to the field of compound semiconductors, in particular to a GaN processing technology for a silicon substrate. Background technique [0002] With the development of society and the advancement of science and technology, semiconductor materials play an extremely important role in the modern scientific and technological revolution. Semiconductor materials can be divided into two types: elemental semiconductors and compound semiconductors. The former, such as silicon (Si), germanium (Ge), etc. The semiconductor formed is formed by compounds such as gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). As a representative of the third-generation semiconductor materials, gallium nitride (GaN) and other nitride materials are one of the research hotspots in the field of optoelectronic materials and high-temperature and high-power devices in recent years. GaN-based semiconductor materials have outstanding advantages ...

AI Technical Summary

Problems solved by technology

Among them, the GaN film on the sapphire substrate is subjected to compressive stress; the GaN film on the silicon carbide substrate is subjected to small tensile stress; due to the thermal mismatch between silicon and GaN as high as 56% and the large lattice mismatch, the epitaxial growth on the silicon substrate GaN films will have huge tensile stress and are prone to cracks, although people have adopted methods such as patterned silicon substrates or growing thicker AlGaN buffer layers to relieve the tensile stress of GaN-based LED epitaxial films on silicon substrates and prevent cracks , but the tensile stress of GaN film on silicon substrate is still more obvious

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