High-side level shifting and driving circuit

Abstract

The invention belongs to the field of integrated circuits, and particularly relates to a high-side level shifting and driving circuit. The circuit comprises a logic circuit, a low-level generation circuit and a high-level generation circuit; when the driving voltage generated by the logic circuit is a high level, the high level generation circuit is controlled not to work, and the low level generation circuit generates a low level voltage; and when the driving voltage generated by the logic circuit is low level, the low level generation circuit is controlled not to work, and the high level generation circuit generates high level voltage. The circuit is simple in structure and low in design complexity; the low-level voltage of the high-side driving signal can be randomly adjusted according to the width-to-length ratio of the current source in the second branch in the low-level generation circuit and the PMOS tube of the current source, and any continuous low-level voltage value can be output; and a triode is not needed, the requirement of the circuit driving capability on the triode in the process can be reduced, and the influence of the performance difference of the triode in the process manufacturing on the driving capability of the circuit is avoided.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a high-side level shifting and driving circuit applied to a high-voltage single-chip DC / DC converter chip. Background technique [0002] With the development of electronic system design towards integration, switching converter chips have been widely used in communication, computer, consumer electronics and other fields. Among them, the monolithic DC / DC converter chip has the characteristics of high integration, high cost performance, the simplest peripheral circuit, and the ability to form a high-efficiency power supply, which makes it widely used. [0003] A common high-voltage monolithic DC / DC converter chip output stage structure is as follows: figure 1 As shown, the PMOS transistor M2 and the NMOS transistor M1 are integrated in the high-voltage DC / DC converter chip. The chip generates the DRIVER (driver) signal through the error amplifier and the PWM controller. The high ...

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Problems solved by technology

[0006] The low-level voltage value of DRIVER_H generated by the above structure is relatively fixed, which is V IN -V Z1 -V BE,Q2 , IC process V Z1 Generally greater than 5V, V BE,Q2 0.7V, V IN -V Z1 -V BE,Q2 The value of 5.7V or more, when the post-stage switch tube gate-source withstand voltage is low (such as 5V), this signal is applied to the post-stage switch tube, which will damage the post-stage switch tube

Also, since a process provides V Z1 Generally, there are no more than 2 optional voltage values. The low-level voltage of DRIVER_H generated by this structure is the same as that of V IN The difference figure is relatively fixed, which cannot meet the application requirements of different voltages in the subsequent stage.

Moreover, the performance of the triode Q2 varies greatly in different processes, which affects the driving capability of the circuit, and the structure of the circuit has higher requirements on the performance of the triode in the process.

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