Infrared detector mirror pixel and infrared detector based on cmos technology

Abstract

The disclosure relates to an infrared detector mirror image element and an infrared detector based on CMOS technology. The mirror image element includes: CMOS measurement circuit system and CMOS infrared sensing structure are both prepared by CMOS technology, and directly prepared above the CMOS measurement circuit system CMOS infrared sensing structure; the infrared conversion structure is electrically connected to the CMOS measurement circuit system through the columnar structure and the supporting base; the infrared conversion structure includes an absorption plate and a beam structure located on the same layer, and the absorption plate converts the infrared signal into an electrical signal and passes through the beam structure It is electrically connected with the columnar structure; the absorption plate includes a metal structure on one side close to or away from the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. Through the technical proposal of the present disclosure, the problems of low performance, low pixel scale and low yield rate of infrared detectors in traditional MEMS technology are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular, to an infrared detector mirror image pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, vehicle auxiliary market, home market, intelligent manufacturing market and mobile phone applications all have strong demand for uncooled high-performance chips, and there is a certain degree of chip performance, consistency of performance and product price. It is estimated that there are potential needs of more than 100 million chips every year, and the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts a combination of measurement circuit and infrared sensing structure. The measuring circuit is fabricated by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) process, while the infrared sensing structure uses M...

AI Technical Summary

Problems solved by technology

[0012] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector image element and an infrared detector based on a CMOS process, Through the technical solution of the present disclosure, the problems of low performance, low pixel scale, and low yield rate of traditional MEMS process infrared detectors are solved, and the accuracy of detection results is improved.

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