Infrared detector pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared through a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure, a plurality of columnar structures, a dielectric protection layer and an etching barrier layer, wherein the dielectric protection layer and the etching barrier layer are located on the reflecting layer. The columnar structures comprise at least two layers of stand columns which are arranged in an overlapped mode and located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns; the dielectric protection layer surrounds the side surface of the columnar structures, and the etching barrier layer at least covers the corner angle position of the dielectric protection layer. Therefore, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; and the detection sensitivity and the structural stability are improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensi...

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Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector to solve the problems of low performance, low pixel scale, and low yield rate of traditional MEMS process infrared detectors. , while improving the detection sensitivity and improving the structural stability

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