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A three-phase AC heater and heating method for the thermal field of a Czochralski monocrystalline silicon furnace

A three-phase AC and heater technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of low crucible heating efficiency and heater damage, so as to improve assembly efficiency and avoid damage Effect

Active Publication Date: 2022-05-27
ZHEJIANG HAINA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the crucible deforms or deviates from the center during long-term use, and when it is heated and expands, the crucible will squeeze the inner side of the heater, thereby causing damage to the heater. Therefore, in order to protect the heater from being damaged, the diameter of the crucible is generally larger than the heater. The inner diameter of the crucible is much smaller, which results in a lower heating efficiency of the heater to the crucible

Method used

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  • A three-phase AC heater and heating method for the thermal field of a Czochralski monocrystalline silicon furnace
  • A three-phase AC heater and heating method for the thermal field of a Czochralski monocrystalline silicon furnace
  • A three-phase AC heater and heating method for the thermal field of a Czochralski monocrystalline silicon furnace

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Embodiment Construction

[0032] In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments These are some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0033] The present invention provides such as Figure 1-6 The shown three-phase AC heater for the thermal field of a Czochralski monocrystalline silicon furnace includes a heater body 1 and a connecting ring 2. The heater body 1 includes three arc-shaped heating plates 3. The arc-shaped heating There are a plurality of strip-shaped...

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Abstract

The invention belongs to the technical field of the thermal field of a Czochralski single crystal furnace, and specifically relates to a three-phase AC heater for a thermal field of a Czochralski single crystal silicon furnace and a heating method thereof, including a heater body and a connecting ring, the heater The body includes three arc-shaped heating plates, and the three arc-shaped heating plates can be spliced ​​into a complete cylinder. The bottom of the arc-shaped heating plate is fixed with pins, and the positions on both sides of the arc-shaped heating plate are opened. There are slots. The present invention is equipped with a pushing device. When the crucible deforms or deviates from the center during long-term use, and when it is heated and expands, the outer wall of the crucible will contact the pushing device, so that the pushing device drives the deflection devices on both sides to work. When the deflection When the device is working, the arc-shaped heating plate moves away from the crucible under the action of the deflection device, so that the distance between the arc-shaped heating plate and the crucible can always be kept constant, thereby avoiding the extrusion of the arc-shaped heating plate due to the crucible damaged by pressure.

Description

technical field [0001] The invention belongs to the technical field of the thermal field of a Czochralski single crystal furnace, and particularly relates to a three-phase AC heater for the thermal field of a Czochralski single crystal silicon furnace and a heating method thereof. Background technique [0002] Czochralski single crystal furnace, also known as single crystal silicon growth furnace, is a manufacturing equipment for producing single crystal silicon by the Czochralski method. It mainly includes parts such as heater, heat preservation cover, heat preservation cover, crucible and electrode, which are made of high temperature resistant high-purity graphite, carbon-carbon composite material, carbon felt material, tungsten-molybdenum metal and high-purity quartz material. [0003] The heater is a very important part in the thermal field, it is the heat source of the whole system, the existing heater is generally a straight cylinder type, when in use, put the crucible...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/14C30B29/06
CPCC30B15/14C30B29/06
Inventor 潘金平肖世豪沈益军张立安饶伟星王伟棱郑春松冯小娟苏文霞
Owner ZHEJIANG HAINA SEMICON CO LTD
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