Resistance-capacitance coupling quick-opening silicon controlled electrostatic protection device and manufacturing method thereof

Abstract

The invention discloses a resistance-capacitance coupling quick-opening silicon controlled electrostatic protection device. The device comprises a P-type substrate; an N-type buried layer is arranged in the P-type substrate; a first N-type deep well, a second N-type deep well and a P-type substrate epitaxial layer P-EPI are arranged above the N-type buried layer; an N well is arranged on the second N-type deep well; a second P well is arranged on the P-type substrate epitaxial layer P-EPI; a second P+ injection region and an embedded N-type MOS tube are arranged in the second P well, and a second N+ injection region, a third P+ injection region and a third N + injection region which stretch across the second P well and the N well are arranged in the Nth well; the first N-type deep well, the second N-type deep well, the N well and the N-type buried layer form an N-type isolation belt; the first P+ injection region, the second P+ injection region, the fourth P+ injection region and the first N+ injection region are connected together and serve as the cathode of the device, and the third P+ injection region and the third N+ injection region II are connected together as the anode of the device.

Description

technical field [0001] The invention relates to the field of electrostatic protection, in particular to a thyristor electrostatic protection device with resistance-capacitance coupling and quick opening and a manufacturing method thereof. Background technique [0002] With the advancement of semiconductor manufacturing technology, the feature size of integrated circuits is getting smaller and smaller, and the integration of chips is getting higher and higher. The failure of chips and electronic products caused by static electricity is becoming more and more serious. ESD protection for electronic products and integrated circuit chips has become a One of the main challenges product engineers face. [0003] The cross-sectional view of the traditional thyristor electrostatic protection device is shown in figure 1 , and its equivalent circuit diagram is shown in figure 2 , when the ESD pulse is applied to the anode of the SCR, the N well and the P well form a reverse-biased PN...

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Problems solved by technology

After the triode is turned on, it provides the base current for the horizontal PNP transistor, so that the horizontal PNP is also turned on. The vertical NPN and the horizontal PNP form a positive feedback loop to promote each other, so that the SCR can be fully turned on at last. When the positive ESD pulse appears on the cathode, The connection between the cathode and the anode is equivalent to a forward-biased PN junction, and its discharge effect is often better than that of the SCR. However, the SCR has a high trigger voltage and a low sustain voltage, which is easy to exceed the design window and cause latch-up. Therefore, it is necessary to reduce the trigger voltage and increase its sustaining voltage

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