Dry cleaning apparatus using plasma and steam

Abstract

A dry cleaning apparatus using plasma and steam, according to the present invention, comprises: a chamber having an upper supply port formed on an upper surface part thereof, having a discharge port formed on a lower surface part thereof, having a side supply port formed on a side surface part thereof, and providing a cleaning space; a chuck which is coupled to the lower surface part of the chamber, and on which a monocrystalline silicon substrate including amorphous silicon, polycrystalline silicon, silicon oxide, or silicon nitride is arranged; an RF electrode which is coupled to the upper surface part of the chamber, and to which RF power is applied; an upper shower head which is coupled to the RF electrode so as to communicate with the upper supply port formed on the upper surface part of the chamber, and which has a plurality of upper spray holes formed thereon; a lower shower head, which is coupled to the side surface part of the chamber, has a plurality of first lower spray holes, has a plurality of second lower spray holes that allow communicating with the side supply port, formed thereon and are electrically grounded; a reaction gas supply unit for supplying reaction gas through the upper supply port formed on the upper surface part of the chamber; and a stem supply unit for supplying hot steam through the side supply port formed on the side surface part of the chamber.

Description

technical field [0001] The present invention relates to a dry cleaning device using plasma and steam, and more particularly, to a dry cleaning device using plasma and steam that uses high temperature Ammonium hexafluorosilicate ((NH 4 ) 2 SiF 6 ) is evaporated and removed, which significantly shortens the processing time, solves the problem of reaction by-products adhering to the inner wall of the chamber and becoming a pollution source of the substrate during the process of removing reactants, increases the cleaning cycle of the chamber itself, and stably An in-situ process in which reactants are repeatedly generated in one chamber and evaporated and removed using high-temperature steam is implemented, and productivity and hardware stability are improved. Background technique [0002] Among the dry cleaning methods, the plasma dry cleaning method is a method in which reactants are activated using plasma so that cleaning is performed using a chemical or physical reaction ...

AI Technical Summary

Problems solved by technology

[0018] The present invention also relates to providing a dry cleaning apparatus using plasma and steam, wherein the solution to the problem of removing ammonium hexafluorosilicate ((NH 4 ) 2 SiF 6 ) during the process of reaction by-products adhere to the inner wall of the chamber and become a contamination source of the substrate

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