High-voltage NPN device

A device and high-voltage technology, which is applied in the field of high-voltage NPN devices, can solve problems such as increased spacing, poor cost performance, and increased device size, and achieve the effects of simplifying the manufacturing process, improving product cost performance, and meeting high-voltage resistance requirements

Inactive Publication Date: 2021-12-21
WUXI CRYSTAL SOURCE MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If it is necessary to manufacture high-voltage NPN devices, thicker epitaxy, deeper isolation diffusion regions and base diffusion regions must be used, which will inevitably lead to an increase in the distance between each diffusion region, and a corresponding sharp increase in the size of NPN and most devices. Big
For products with only NPN tubes or some NPNs working under high-voltage conditions, the area of ​​most devices is increased due to the demand for a small number of high-voltage devices, which is a very cost-effective design.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Such as figure 2 As shown, an N-type epitaxial island is provided above the P-type substrate, and between the lower end of the N-type epitaxial island and the P-type substrate, a first N-type buried layer and a second N-type buried layer are arranged in sequence from left to right. buried layer;

[0044] The top of the first N-type buried layer is sequentially connected to the first deep N well diffusion region and the first N+ diffusion region from bottom to top, and an ohmic contact is formed above the first N+ diffusion region through a contact hole and a metal line, as the JFET The drain of the tube and the collector terminal of the high-voltage NPN device;

[0045] The N-type epitaxial island is provided with a second P well region, the second P well region is located above the first N-type buried layer and the second N-type buried layer, and the second P well region Connected to the P-type substrate directly below it as the gate of the JFET tube;

[0046] The ...

Embodiment 2

[0054] Such as image 3 As shown, a first N-type epitaxial island and a second N-type epitaxial island are arranged adjacent to each other from left to right above the P-type substrate, and between the lower end of the first N-type epitaxial island and the P-type substrate A first N-type buried layer and a second N-type buried layer are sequentially provided from left to right; a third N-type buried layer is provided between the lower end of the second N-type epitaxial island and the P-type substrate;

[0055] The top of the first N-type buried layer is sequentially connected to the first deep N well diffusion region and the first N+ diffusion region from bottom to top, and an ohmic contact is formed above the first N+ diffusion region through a contact hole and a metal line, as the JFET The drain of the tube and the collector terminal of the high-voltage NPN device;

[0056] The first N-type epitaxial island is provided with a second P well region, the second P well region i...

Embodiment 3

[0065] Such as Figure 4 As shown, the difference between the third embodiment and the second embodiment mainly lies in that there is a space between the first N-type epitaxial island and the second N-type epitaxial island, and other components can be arranged in the space. Although this will increase the device area, it increases the flexibility of the layout layout, and the characteristics of the high-voltage NPN device composed of it remain unchanged.

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Abstract

The invention relates to a high-voltage NPN device integrated with a JFET clamping structure. The device comprises a low-voltage NPN triode and a JFET, and the low-voltage NPN triode is integrated with the JFET; the collector electrode of the low-voltage NPN triode is connected with the source electrode of the JFET; the drain electrode of the JFET is used as the collector electrode of the high-voltage NPN device; and the base electrode and the emitting electrode of the low-voltage NPN triode are respectively used as the base electrode and the emitting electrode of the high-voltage NPN device. The device is designed and manufactured by using a conventional low-voltage process, and the high-voltage-resistant requirement can be met without increasing the areas of other devices.

Description

technical field [0001] The invention relates to a high-voltage NPN device, in particular to a high-voltage NPN device with an integrated JFET clamp structure. Background technique [0002] In chip design, NPN tubes are widely used for current amplification, signal processing or electronic switching. Many applications require NPN tubes to work under high voltage conditions. In chip design, 5V is generally used as the dividing line, below 5V is low voltage, and above 5V is high voltage. At present, in the mainstream integrated circuit manufacturing process (including Bipolar, BiCMOS, BCD process, etc.), in order to manufacture NPN tubes with good performance, the epitaxial process is used, and most of the devices are made in the epitaxial layer. During the manufacturing process, NPN tubes are formed together with other devices. If it is necessary to manufacture high-voltage NPN devices, thicker epitaxy, deeper isolation diffusion regions and base diffusion regions must be us...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L27/06
CPCH01L29/7302H01L27/0623
Inventor 张炜
Owner WUXI CRYSTAL SOURCE MICROELECTRONICS CO LTD
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