32results about How to "Meet high pressure requirements" patented technology

The invention discloses a methanation method and device for preparation of synthetic natural gas. The method comprises that raw material gas subjected to catalyst poison purification removal enters into a first methanation reactor and undergoes a methanation reaction with most of H2 and CO, and the reaction gas enters into a second methanation reactor and undergoes a methanation reaction with the rest of H2 and CO so that dry gas subjected to methanation has CH4 content greater than 93% and a calorific value greater than 33MJ/M<3>. The invention also discloses a device for implementation of the method. The high-efficiency energy-saving compact large-scale natural gas methanation preparation technology and device are especially suitable for the conditions that many ammonia synthesis factories need coal gasification and purification low pressure apparatuses and ammonia synthesis middle/high pressure apparatuses. Middle and small scale ammonia synthesis factory high-pressure compressor and high-pressure synthesis device in China can be transformed into an artificial natural gas synthesis device so that a large amount of investment is saved. The technology and device have important effects.

The invention relates to an LNG regasification experiment system. The LNG regasification experiment system comprises an LNG circulation unit and a propane circulation unit, wherein the LNG circulationunit comprises an LNG liquid tank, a liquid outlet valve, a plunger type booster pump, a pressure stabilizing tank, a micro-channel vaporizer, a back pressure valve, an air temperature type reheater,an emptying pipe, a three-way valve I, a pressure reducing valve and a liquid storage tank; and the propane circulation unit comprises a propane liquid storage tank, a propane circulation pump, a three-way valve II, a floating coil type heat exchanger, an electric heater, a liquid inlet valve and a discharge valve. The invention further relates to an experiment method based on the experiment system. The experiment method comprises the following steps: system construction, propane cooling, LNG vaporization, flow control and LNG reheating. The LNG regasification experiment system and the experiment method have the advantages that the propane circulation unit is additionally arranged, so that direct heat exchange between propane and LNG fluid is avoided; and meanwhile, a large amount of latent heat is released by utilizing phase change heat exchange of the propane, so that the occurrence of an icing phenomenon in a heat exchange process of the micro-channel vaporizer is effectively reduced, and efficient operation of the micro-channel vaporizer is guaranteed.

The invention discloses a control method for improving warping of an aluminum-based mixed compression structure laminated board, which comprises the following steps of: optimizing a laminated structure to ensure that a thickness ratio of an aluminum-based core board dielectric layer to a core board dielectric layer in an inner core board is more than or equal to 10:1; manufacturing the inner-layer core plate; manufacturing an aluminum-based component, namely, after cutting the aluminum-based component, carrying out hot pressing on the aluminum-based component once in advance; pressing, namely pressing the inner-layer core plate and an aluminum base together by adopting a vacuum laminating machine; conducting plate warping leveling treatment, specifically, after pressing is conducted, conducting leveling treatment by a plate warping leveling machine; carrying out X-Ray targeting; ceramic grinding; manufacturing an outer-layer circuit; performing acid etching; carrying out resistance welding; forming a character; performing gold immersion; carrying out e-T testing; forming CNC appearance; and inspecting a finished product. The aluminum base and the inner core plate with preset thickness are selected, so that the whole PCB is lighter and thinner, the warpage of the PCB is reduced, the high-pressure-resistant requirement of the PCB can be met, hot pressing is performed once by using a high-temperature press (200 DEG C) in advance, the thermal stability of the aluminum base is improved, the hot-pressing expansion and shrinkage change of the aluminum base is reduced, and the high-flatness requirement of a customer on a product is met.

Disclosed is a resistor for isolating a resistor element by utilizing an integral ceramic tube; the resistor comprises a frame, wherein a resistor unit is arranged in the frame, and the resistor unitis fastened and connected with the frame through a supporting piece; the resistor unit is a chip resistor unit which is formed by resistor strips or resistor pieces in a circuitous forming mode up anddown; and the end heads of the upper and lower circuitous ends of the resistor strips or the resistor pieces in the resistor unit are isolated and positioned through the integral ceramic tube. Clamping grooves are formed in the outer surface of the integral ceramic tube according to the arrangement spacing of the resistor strips or the resistor pieces of the resistor unit, the two end parts of the resistor strips or the resistor pieces are integrally clamped into the clamping grooves of the integral ceramic tube, and isolation insulation and positioning can be formed between the end heads ofthe resistor strips or the resistor pieces through the corresponding clamping grooves. The integral ceramic tube is directly clamped into opening grooves of the resistor strips or the resistor pieces,so that isolation and positioning of the resistor strips or the resistor pieces is realized, the creepage distance of the resistor strips or the resistor pieces is prolonged, and the insulating performance of the resistor is improved.

The invention discloses a small-size high-voltage-resistance electromagnetic relay. The small-size high-voltage-resistance electromagnetic relay comprises a shell, a base, a movable reed, a static reed, a pushing clamp and a magnetic circuit portion; the shell is connected with the base; the bottom portions of the static reed, the movable reed and the magnetic circuit portion are installed on thebase, the pushing clamp is cooperated between the movable reed and the magnetic circuit portion; a large distance is arranged between the movable reed and the static reed; a high wall is protruded atthe base upwards, the pushing clamp comprises a vertical piece and a push arm horizontally connected to the vertical piece, the top portion of the vertical piece of the pushing clamp is rotationally installed at the top portion of the high wall of the base through a rotating shaft, and the push arm of the pushing clamp is cooperated with the position, close to the root, of the movable reed. The small-size high-voltage-resistance electromagnetic relay can achieve high pressure resistance under the condition of a small volume, can avoid early fatigue fracture of the movable reed due to large-stroke movement, and can avoid the phenomenon that a pushing clamp falls off to cause product failure under the condition of a large vibration impact.

The invention discloses a heat exchanger with an observation window and for low temperature of 80K. According to the structure, a mechanical sealing mode is adopted, indium wires are used as sealing materials, and visual observation of the phase change process at the low temperature is realized. The heat exchanger has the beneficial effects that a phase change cavity is made of red copper, so thatthe heat exchange efficiency is effectively improved; an upper cover plate is made of stainless steel materials, so that the pressure bearing capacity of the heat exchanger is enhanced under the condition that heat leakage by an upper surface is reduced; the observation window is arranged between the upper cover plate and a heat exchange cavity, so that visual observation of the phase change process is realized; and the upper cover plate and glass, and the glass and the phase change cavity are sealed by the indium wires, so that components with different linear expansion coefficients are wellsealed in the cooling process, and phase change heat exchange and observation at the low temperature of 80K are realized.

The invention provides a high voltage circuit of a semiconductor sensor. The high voltage circuit of a semiconductor sensor includes a direct current pulse PMW module, a bootstrap high voltage circuit, a voltage doubling circuit, and a resistive subdivision feedback circuit, wherein the direct current pulse PMW module adjusts the magnitude of the voltage amplitude and the duty cycle of an input power source, generates a closed loop controlled direct current pulse PMW signal, and outputs the direct current pulse PMW signal to the bootstrap high voltage circuit; the bootstrap high voltage circuit modulates the direct current pulse PMW signal into a bootstrap high voltage signal and outputs the bootstrap high voltage signal to the voltage doubling circuit; the voltage doubling circuit is usedfor amplifying the bootstrap high voltage signal by multiple times to form a high voltage signal, and one branch of the high voltage signal is directly outputted, and the other branch of the high voltage signal is input into the resistive subdivision feedback circuit; and the resistive subdivision feedback circuit performs resistive subdivision on the high voltage signal and outputs the feedbackvoltage to the direct current pulse PMW module. A single lithium battery can be used for supplying power for the high voltage circuit of a semiconductor sensor. The high voltage circuit of a semiconductor sensor is low in power consumption which is less than 5 mW. The output current of the high voltage circuit of a semiconductor sensor can reach 1 mu A, thus satisfying the high voltage demand fora large area multi-pixel Si semiconductor sensor.

The invention relates to a high-voltage NPN device integrated with a JFET clamping structure. The device comprises a low-voltage NPN triode and a JFET, and the low-voltage NPN triode is integrated with the JFET; the collector electrode of the low-voltage NPN triode is connected with the source electrode of the JFET; the drain electrode of the JFET is used as the collector electrode of the high-voltage NPN device; and the base electrode and the emitting electrode of the low-voltage NPN triode are respectively used as the base electrode and the emitting electrode of the high-voltage NPN device. The device is designed and manufactured by using a conventional low-voltage process, and the high-voltage-resistant requirement can be met without increasing the areas of other devices.

The invention relates to a wiring terminal with pins stretching out in staggered positions. The wiring terminal includes a pedestal, clamping pieces arranged on the pedestal and conductive pins arranged on the clamping pieces, the conductive pins include front pins and rear pins, the conductive pins on two adjacent clamping pieces are different, each front pin includes a front fixed part and a front insertion part arranged on the front fixed part, and the front insertion part is close to the front end of the pedestal; and each rear pin includes a rear fixed part and a rear insertion part arranged on the rear fixed part, and the rear insertion is close to the rear end of the pedestal. Compared with the prior art, the wiring terminal with pins stretching out in staggered positions provided by the invention has the following advantages: the wiring terminal is simple in structure and convenient to assemble, and compared with the prior art, the front pins and rear pins of different structures are adopted, so that distance between the front insertion part and the rear insertion part which are adjacent is far larger than distance between two adjacent insertion parts in an existing wiringterminal, and thus an electrical interval requirement that needs to be fulfilled when high voltage is applied can be met.