Semiconductor device, manufacturing method and application thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve problems such as complex process control, achieve good stability, high withstand voltage, and easy process
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no. 1 approach
[0072] At present, the process of manufacturing III-nitride semiconductor normally-off devices is generally realized by forming a P-type nitride semiconductor gate electrode on the barrier layer. Due to the poor insulation performance of the barrier layer, it is easy to cause a large gate current to appear. At the same time, the distance between the gate electrode and the channel is relatively far due to the distance between the barrier layer and the channel, which is not conducive to obtaining a higher threshold voltage.
[0073] In view of this, the present application provides a group III nitride semiconductor normally-off device, which overcomes the existing defects and achieves the aforementioned beneficial technical effects by designing a new process flow method.
[0074] refer to Figure 1-2 to describe the semiconductor device according to the first embodiment, wherein figure 1 Shown is the structure of the HEMT, figure 2 Shown is the structure of the diode.
[00...
no. 2 approach
[0093] will now refer to Figure 3-11 A manufacturing method for manufacturing the semiconductor device of the first embodiment will be described exemplarily. It should be understood that although HEMTs and diodes are used as examples for the semiconductor devices in this embodiment, they are only illustrative and not intended to limit the types of semiconductor devices.
[0094] Step 100 , providing a substrate 100 , the selection of the material of the substrate 100 refers to the description in the first embodiment, and will not be repeated here.
[0095] Step 200 , forming the first semiconductor layer 201 on the first surface of the substrate 100 , the first semiconductor layer 201 includes a P-type nitride semiconductor, such as P-GaN. Here, the first semiconductor layer 201 is preferably formed by a material growth method, for example, the first semiconductor layer 201 is formed by epitaxial growth, so that damage to the crystal structure caused by ion implantation can ...
no. 3 approach
[0106] will now refer to Figure 12-15 Another manufacturing method for manufacturing the semiconductor device of the first embodiment will be exemplarily described.
[0107] The difference between the manufacturing method and the aforementioned manufacturing method is only:
[0108] Step 300, depositing a material layer 207 containing N-type impurities to be diffused in the first semiconductor layer 201, for example, a material layer containing silicon or a material layer containing germanium, or a material layer containing amorphous carbon or iron material layer etc. Then photoetching is performed on the material layer 207 to remove the material layer corresponding to the position of the subsequent gate region or anode region, and then heated to diffuse the impurity material into the first semiconductor layer 201, and then remove the material layer 207 .
[0109] It can be understood that step 300 may also use a lift-off process: a mask layer with openings is formed on th...
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