Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for inducing lattice distortion in metal oxide through atom substitution effect

A lattice distortion and metal-inducing technology, which is used in manganese oxide/manganese hydroxide, hybrid/electric double-layer capacitor manufacturing, hybrid capacitor electrodes, etc.

Pending Publication Date: 2021-12-28
BEIJING UNIV OF CHEM TECH
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, Mn 3 o 4 It has become a promising candidate material due to its high abundance, environmental friendliness, and high theoretical specific capacitance, however, low electrical conductivity, large volume change, and easy agglomeration during the reaction limit its practical application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for inducing lattice distortion in metal oxide through atom substitution effect
  • Method for inducing lattice distortion in metal oxide through atom substitution effect
  • Method for inducing lattice distortion in metal oxide through atom substitution effect

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Mn(NO 3 ) 2 Make an aqueous solution, then add 1mol / L sodium hydroxide, adjust the pH of the solution to 9, and then add H 2 o 2 Solution, it was observed that a large number of bubbles and precipitates were generated; then the reaction system was placed in an ultrasonic tank for continuous ultrasonic or / and mechanical stirring; finally, the product was washed with deionized water, filtered, and dried to obtain a precursor material; Bulk material mixed with sublimated sulfur powder, put into tube furnace, under N 2 Carry out calcination under the atmosphere for 2 hours, and then wash the calcined material with cyclohexane for desulfurization; finally wash with deionized water and ethanol, filter the obtained product, and dry to obtain a product with crystal lattice distortion.

[0020] Every 0.4g Mn(NO 3 ) 2 Corresponding to 30% of H 2 o 2 Solution 1mL; Mn(NO 3 ) 2 The mass percentage concentration of the aqueous solution is 1%; the mass ratio of the precursor ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for inducing lattice distortion in a metal oxide through an atom substitution effect, and belongs to the field of material preparation. The sublimed sulfur powder and the manganese oxide are mixed and calcined to introduce lattice distortion, so that the electrochemical performance and the stability of the manganese oxide electrode material are improved, and the method is safe and simple in preparation and easy to operate.

Description

Technical field: [0001] The invention belongs to the field of material preparation, and in particular relates to a metal oxide with lattice distortion and a preparation method thereof. Background technique [0002] With the rapid development of industrialization in modern society, the human demand for fossil fuels is increasing, resulting in serious energy consumption and environmental pollution, which greatly promotes the research and development of clean energy and the development of renewable energy storage equipment. Supercapacitors (SCs) have been recognized as efficient electrical energy storage devices due to their excellent rate capability, long cycle life, and ultrahigh power density. However, the development of SCs has been limited due to the lack of stable electrode materials to achieve higher energy / power density and long cycle life. [0003] Transition metal oxides have been extensively studied for their highly capacitive pseudocapacitive charge storage mechani...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G45/02H01G11/46H01G11/86
CPCC01G45/02H01G11/46H01G11/86C01P2004/03C01P2004/04C01P2002/82C01P2006/40Y02E60/13
Inventor 严乙铭王诗雨杨志宇姚舒允刘若琛
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com