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Shell-passivated metal-doped core-shell quantum dots, preparation method and application thereof

A technology of core-shell quantum dots and passivated metals, which can be used in chemical instruments and methods, luminescent materials, nanotechnology, etc., and can solve the problems of quantum dot fluorescence performance attenuation, hindering transition electron and hole recombination, unfavorable anti-counterfeiting and other applications. , to achieve the effects of high stability and fluorescence quantum efficiency, high anti-counterfeiting and confidentiality level, and high difficulty in copying and cracking

Active Publication Date: 2022-06-14
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the surface defects generated during the synthesis of metal-doped quantum dots will hinder the recombination of transition electrons and holes, and attenuate the fluorescence performance of quantum dots, which is not conducive to anti-counterfeiting and other applications.
However, the ordinary shell passivation scheme will cause the doping metal inside the quantum dots to escape during the experiment, causing the quantum dots to lose their original doped fluorescence.

Method used

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  • Shell-passivated metal-doped core-shell quantum dots, preparation method and application thereof
  • Shell-passivated metal-doped core-shell quantum dots, preparation method and application thereof
  • Shell-passivated metal-doped core-shell quantum dots, preparation method and application thereof

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preparation example Construction

[0034] A method for preparing shell passivation metal-doped core-shell quantum dots provided by the present invention comprises the following steps:

[0035] S1. Disperse the metal-doped quantum dots into a solvent, add a predetermined content of the ligand solution containing the metal ions doped in the metal-doped quantum dots into it, and then evacuate until the solvent is completely extracted;

[0036] Among them, the solvent is preferably n-hexane. The metal-doped quantum dots are prepared by liquid-phase reaction, and the morphology and size are monodispersed.

[0037] S2. The reaction system processed in step S1 is heated to the first preset temperature, and the solution containing the metal element of the passivation layer is injected into it, and after the reaction preset time, the sulfur powder solution is injected again and the temperature is continued to be heated to the second preset temperature , keep the temperature reaction preset time, record as the first cyc...

Embodiment 1

[0053] A Cu-doped CdSe / CdS quantum dot is prepared by the following steps:

[0054] (1)Cu 2 Preparation of Se quantum dots: Mix 0.5mmol of copper acetate and 4ml of oleylamine into a 50ml three-necked flask, then pass nitrogen and heat up to 130°C, then add 2ml of n-dodecanethiol, 1ml of oleylamine, 0.5ml of oleylamine in turn The mixed solution of n-dodecanethiol and 19 mg of selenium powder was kept at this temperature for 15 minutes. After cooling to room temperature, 15 ml of ethanol was added to the flask, followed by centrifugation at 4,000 rpm for 5 minutes, the supernatant was discarded, and the bottom precipitate was dispersed into 10 ml of n-hexane.

[0055] (2) Preparation of Cu-doped CdSe quantum dots: 1mmol of cadmium acetate, 10ml of octadecene and 1ml of tributylphosphine were mixed into a 50ml three-necked flask, and the temperature was raised to 80°C by introducing nitrogen, and then the above 10ml Cu 2 The n-hexane solution of Se quantum dots was added to t...

Embodiment 2

[0064] A Cu-doped CdSe / ZnS quantum dot, compared with Example 1, is different in that the cadmium stearate in step (4) is replaced with zinc stearate. Others are substantially the same as those in Embodiment 1, and are not repeated here.

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Abstract

The invention provides a shell passivation metal-doped core-shell quantum dot and its preparation method and application. The preparation method is to first disperse the metal-doped quantum dots into a solvent, then add a predetermined content of a ligand solution containing the corresponding metal ions doped in the metal-doped quantum dots, and then vacuumize until the solvent is completely extracted; The thermal injection method is used to controlly passivate the quantum dots, and the content of the metal element solution and the sulfur powder solution in the passivation layer is gradually increased for each cycle of thermal injection; finally, the reaction solution is cooled to room temperature, centrifuged, and washed to obtain shells. layer passivation metal doped core-shell quantum dots. The method of the invention can prepare stable metal-doped core / shell structure quantum dots, compensate for surface defects, improve the light quantum efficiency of the quantum dots, and ensure the stability of their properties.

Description

technical field [0001] The invention relates to the technical field of preparation of luminescent quantum dots, in particular to a shell passivation metal-doped core-shell quantum dot and a preparation method and application thereof. Background technique [0002] Quantum Dots are a kind of group II-VI elements (such as CdTe, etc.), or III-V group elements (such as LnP, etc.), or IV-IV group elements (such as SiC, etc.), or IV-VI group elements. Nanoparticles composed of elements (such as PbS, etc.) are also called semiconductor nanocrystals. Quantum dots are quasi-zero-dimensional materials with a particle size between 1 and 10 nm composed of a few atoms, and their energy band structure is discontinuous and discrete energy levels, which can emit fluorescence when excited. Due to its unique quantum confinement effect, a continuous spectrum covering from blue to near-infrared can be achieved by simply manipulating the size of quantum dots. Quantum dot materials also exhibit ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y40/00
CPCC09K11/883C09K11/02C09K11/025B82Y20/00B82Y40/00
Inventor 徐萌李建中张加涛白冰张书萍
Owner BEIJING INSTITUTE OF TECHNOLOGYGY