Power semiconductor characteristic parameter test system and method

Abstract

The invention discloses a power semiconductor characteristic parameter testing system and method, and belongs to the technical field of semiconductor characteristic parameter testing. The invention discloses a power semiconductor characteristic parameter testing system which comprises a power main loop, a double-pulse testing circuit and an inductance blocking circuit. According to the invention, an auxiliary power semiconductor is arranged to control the conduction time of the to-be-tested power semiconductor and the on-off of the circuit, and absorption capacitors are arranged at the two ends of the power semiconductor, so that partial parasitic inductance between the bus capacitor and the test half-bridge can be effectively blocked; and meanwhile, a power main loop is arranged by adopting a laminated busbar structure, stray inductance is greatly reduced through a smaller loop area, and high current bearing can be realized with lower voltage. Therefore, voltage overshoot superposition and switching loss can be effectively reduced, electromagnetic interference can be effectively avoided, and the system and methodare especially suitable for high-precision dynamic characteristic parameter testing of a third-generation semiconductor high-voltage SiC power device.

Description

technical field [0001] The invention relates to a power semiconductor characteristic parameter testing system and method, belonging to the technical field of semiconductor characteristic parameter testing. Background technique [0002] The use of a high proportion of power electronic equipment is the main technical feature of the new generation of power systems. With a large number of different types and different voltage levels of power electronic equipment connected to the grid, the trend of power electronics in my country's power system is gradually emerging. Power electronics is an important supporting technology for modern science, industry and national defense, and one of the core technologies for transforming traditional industries and developing emerging industries. Power devices are the core and foundation of power electronics technology, the core driving force for the development of power electronics technology, and largely determine the performance of power elect...

AI Technical Summary

Problems solved by technology

[0008] In the current commercial market, many domestic and foreign manufacturers have introduced test system equipment for the dynamic characteristic parameters of power semiconductor devices, but most of them use traditional Si devices as test objects, and regard the dynamic characteristics of Si devices as the technical requirements of their test systems. The parasitic parameters of dynamic test equipment can only meet the test requirements of low-speed switching characteristics of traditional power devices, and are not aimed at and adapted to high-voltage SiC power devices. Therefore, the existing technology cannot perform high-precision dynamic characteristics of third-generation semiconductor high-voltage SiC power devices. Parametric testing, which in turn has an adverse impact on the promotion, application and industry development of power electronic devices in my country

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