Low-leakage amplifier biasing circuit

Abstract

A low-leakage amplifier bias circuit comprises a common-source bias circuit and a plurality of common-gate bias circuits; the common-source bias circuit provides common-source bias voltage for a common-source transistor of an amplifier, and the common-gate bias circuits provide common-source bias voltage for a common-source transistor of the amplifier; the common-gate bias circuit provides bias voltage for a common-gate transistor of the amplifier; when the amplifier is in a turn-off state, the common source bias circuit pulls down the common source bias voltage to the ground, and the common gate bias circuit pulls down the bias voltage to turn-off voltage; when the amplifier is in a turn-off and turn-on state, the common-source bias circuit disconnects the common-source bias voltage from the ground, and the common-gate bias circuit pulls the bias voltage to turn-on gate voltage. According to the low-leakage amplifier biasing circuit, the grid voltage of the common-gate transistor of the amplifier is lowered, so that the drain voltage of the common-source transistor is lowered, the leakage current is controlled to the maximum extent, and the static power consumption of the amplifier is lowered.

Description

technical field [0001] The present invention relates to an amplifier, in particular to an amplifier bias circuit. Background technique [0002] Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a field-effect transistor (field-effect transistor) that can be widely used in analog circuits and digital circuits, including CMOS, SOI, GaN , BJT, etc. [0003] For MOSFET transistors, when both the drain and source are grounded, as the gate voltage VG increases, electrons are attracted by the positive electricity on the gate, forming a depletion layer between the drain and source. At this time The MOSFET is in the off state; as the gate voltage increases, more electrons are attracted to the surface of the gate oxide layer, forming a conduction channel between the drain and the source. current. But when the drain voltage is not 0, even if VG=0, it does not mean that there is no current generation in the MOSFET. Since the PN junction is formed between the drain N regi...

AI Technical Summary

Problems solved by technology

[0006] figure 2 It is the common source bias circuit diagram of the existing MOSFET transistor RF amplifier, such as figure 2 As shown, when the gate terminal of the MOSFET is pulled down to the ground, if there is still a voltage Vd at the drain terminal, the transistor still has the reverse saturatio

Images