Preparation method of CdZnTe thin-film ultraviolet light detector

A technology of ultraviolet light and detectors, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve low cost, improve device responsivity, and control device leakage current effects

Inactive Publication Date: 2014-12-31
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there has not been systematic research on the preparation process of detector-grade CdZnTe thin films at home and abroad.

Method used

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  • Preparation method of CdZnTe thin-film ultraviolet light detector
  • Preparation method of CdZnTe thin-film ultraviolet light detector
  • Preparation method of CdZnTe thin-film ultraviolet light detector

Examples

Experimental program
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Effect test

Embodiment 1

[0025] The preparation process and steps of this embodiment are as follows:

[0026] (a) Preparation of the sublimation source: According to the known prior art, under high vacuum, high-purity Cd, Zn, Te simple substances are transformed from liquid to solid at a crystallization point in the temperature gradient region of the Bridgman furnace, CdZnTe crystals with good quality, relatively uniform composition distribution, and a zinc molar content of 5% were grown, and sliced ​​as a sublimation source;

[0027] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Into the close space sublimation reaction chamber;

[0028] (c) Growth process: Turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanical...

Embodiment 2

[0032] The preparation process and steps of this embodiment are as follows:

[0033] (a) Preparation of the sublimation source: According to the known prior art, under high vacuum, high-purity Cd, Zn, Te simple substances are transformed from liquid to solid at a crystallization point in the temperature gradient region of the Bridgman furnace, CdZnTe crystals with good quality, relatively uniform composition distribution, and a zinc molar content of 5% were grown, and sliced ​​as a sublimation source;

[0034] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Enter the close-space sublimation reaction chamber.

[0035] (c) Growth process: Turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanica...

Embodiment 3

[0039] The preparation process and steps of this embodiment are as follows:

[0040] (a) Preparation of the sublimation source: According to the known prior art, under high vacuum, high-purity Cd, Zn, Te simple substances are transformed from liquid to solid at a crystallization point in the temperature gradient region of the Bridgman furnace, CdZnTe crystals with good quality, relatively uniform composition distribution, and a zinc molar content of 5% were grown, and sliced ​​as a sublimation source;

[0041] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Enter the close-space sublimation reaction chamber.

[0042] (c) Growth process: Turn on the mechanical pump to evacuate the sublimation chamber to below 3Pa, then turn off the mechanica...

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Abstract

The invention relates to a preparation method of a CdZnTe thin-film Schottky-structured ultraviolet light detector, belonging to the technical field of manufacture processes of devices made of inorganic non-metal materials. According to the invention, a closed-space sublimation method is adopted to prepare a CdZnTe thin film and manufacture the CdZnTe thin-film Schottky-structured ultraviolet light detector, and thus, a new method for manufacturing the high-performance ultraviolet light detector is provided. The CdZnTe thin-film Schottky-structured ultraviolet light detector disclosed by the invention is characterized in that the closed-space sublimation method is adopted to prepare a CdZnTe thin film sample with high evenness, small particle size and high resistivity, wherein the area of the thin film is more than 1cm<2>, the thickness of the thin film is more than 10 mu. M, and the resistivity reaches 108 omega.cm; and the thickness of a metal electrode is 50-300nm.

Description

technical field [0001] The invention relates to a method for manufacturing a CdZnTe thin-film Schottky structure ultraviolet detector, belonging to the technical field of inorganic non-metal material device manufacturing technology. Background technique [0002] CdZnTe has a large band gap and a high average atomic number, and is suitable for room temperature X-ray and γ-ray detectors. With the development of CdZnTe materials and the emergence of new devices, CdZnTe materials are widely used in medicine, space science, airports, and ports. It has broad application prospects in security inspection, nuclear waste detection and other nuclear technology fields. However, due to the inherent physical properties of CdZnTe, crystals grown by the melt method have many defects such as composition inhomogeneity, grain boundaries, twins, dislocations, inclusion phases, and precipitation. CdZnTe single crystal materials are not suitable for large-area flat panel detectors. To this end, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王林军蔡良敏黄健唐可马礼敏张继军姜佳蔚
Owner SHANGHAI UNIV
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