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Method for manufacturing CdMnTe film ultraviolet-light detector of ohm structure

A detector and ultraviolet light technology, applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., to achieve the effects of reducing noise, controlling device leakage current, and improving device leakage current

Inactive Publication Date: 2013-12-25
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there has not been systematic research on the preparation process of detector-grade CdMnTe thin films at home and abroad.

Method used

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  • Method for manufacturing CdMnTe film ultraviolet-light detector of ohm structure
  • Method for manufacturing CdMnTe film ultraviolet-light detector of ohm structure
  • Method for manufacturing CdMnTe film ultraviolet-light detector of ohm structure

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Experimental program
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Effect test

Embodiment 1

[0024] The preparation process and steps of this embodiment are as follows:

[0025] (a) Preparation of CdMnTe single crystal sublimation source: According to the known prior art, the molar content of high-purity Cd, Mn and Te is 50% for Te, 44% for Cd, and 6% for Mn Put the compound into a quartz tube, and grow a CdMnTe single crystal with good quality and relatively uniform composition distribution under high vacuum by using the mobile heating method, and use the grown crystal slice as the sublimation source;

[0026] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Into the close space sublimation reaction chamber;

[0027] (c) CdMnTe film growth process: turn on the mechanical pump to evacuate, pump the air pressure in the sublimation ch...

Embodiment 2

[0031] The preparation process and steps of this embodiment are as follows:

[0032] (a) Preparation of CdMnTe single crystal sublimation source: According to the known prior art, high-purity Cd, Mn, and Te are prepared with the molar content of Te being 50%, the molar content of Cd being 44%, and the Mn content being 6% Put the compound into a quartz tube, and grow a CdMnTe single crystal with good quality and relatively uniform composition distribution under high vacuum by using the mobile heating method, and use the grown crystal slice as the sublimation source;

[0033] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO (fluorine tin oxide) as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic matter on the surface , put into near-space sublimation reaction chamber after drying.

[0034](c) CdMnTe thin film growth process: Turn on...

Embodiment 3

[0038] The preparation process and steps of this embodiment are as follows:

[0039] (a) Preparation of CdMnTe single crystal sublimation source: According to the known prior art, the molar content of high-purity Cd, Mn and Te is 50% for Te, 44% for Cd, and 6% for Mn. % complexes were placed in a quartz tube, and under high vacuum, a CdMnTe single crystal with good quality and relatively uniform composition distribution was grown by moving heating method, and the grown crystal slice was used as a sublimation source;

[0040] (b) Substrate pretreatment: use glass coated with a transparent conductive layer FTO as the substrate, and ultrasonically clean the substrate with deionized water, acetone and ethanol for 15 minutes respectively to remove impurities and organic substances on the surface, dry and put Into the close space sublimation reaction chamber;

[0041] (c) CdMnTe film growth process: turn on the mechanical pump to evacuate, pump the air pressure in the sublimati...

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Abstract

The invention relates to a method for manufacturing a CdMnTe film ultraviolet-light detector of an ohm structure, and belongs to the technical field of ultraviolet-light detector and apparatus manufacturing. CdMnTe films are prepared in a near space sublimation method, and the CdMnTe film ultraviolet-light detector of the ohm structure is manufactured. A new method for manufacturing high-performance ultraviolet-light detectors is provided. The method is used for manufacturing CdMnTe film samples with high smoothness, even particle size and high specific resistance. The thickness of a film is 200m, and the specific resistance is 109 omega per centimeter.

Description

technical field [0001] The invention relates to a method for manufacturing an ohmic structure CdMnTe thin film ultraviolet light detector, belonging to the technical field of ultraviolet light detector photosensitive materials and device manufacturing techniques. Background technique [0002] Ultraviolet detection technology is the most popular photoelectric detection technology for both military and civilian purposes in recent years. Because space, flames, oil, gas pollutant molecules, and the corona phenomenon of high-voltage lines all contain ultraviolet radiation, ultraviolet detectors have a wide range of application requirements in aerospace, communication, civil detection and other fields. Countries all over the world have listed solid-state ultraviolet detector technology as a key topic of current research and development. In the research of wide-bandgap semiconductor ultraviolet detectors, the past decade has mainly focused on materials such as SiC, GaN, ZnO, and d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 王林军沈萍张继军沈永杰唐荣烨姚蓓玲周捷黄健唐可
Owner SHANGHAI UNIV
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