Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and Application of Grain Picking in Gallium Arsenide Chip Packaging Structure

A chip packaging structure and gallium arsenide technology, which is applied in the field of gallium arsenide chips, can solve the problems of inability to take complete grains, and achieve the effect of improving product performance and optimizing product structure

Active Publication Date: 2022-05-20
GIGA FORCE ELECTRONICS CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The first purpose of the present invention is to provide a method for taking crystal grains in a gallium arsenide chip packaging structure, so as to improve the technical problem that the existing technology cannot completely take crystal grains

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and Application of Grain Picking in Gallium Arsenide Chip Packaging Structure
  • Method and Application of Grain Picking in Gallium Arsenide Chip Packaging Structure
  • Method and Application of Grain Picking in Gallium Arsenide Chip Packaging Structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0079] As a preferred embodiment of the present invention, the method for extracting crystal grains from a gallium arsenide chip package structure includes the following steps:

[0080] (a) removing at least part of the substrate and at least part of the plastic package in the gallium arsenide chip package structure for pretreatment;

[0081] (b) placing the pretreated gallium arsenide chip package structure in the liquid composition for reaction, the reaction time is 15-20s, the temperature is 150-200°C, and then taken out for ultrasonic cleaning, the cleaning time is 10-30s, get grains;

[0082] Wherein, the liquid composition includes concentrated sulfuric acid, first nitric acid and second nitric acid, the mass fraction of the first nitric acid is 95-99.9%, the mass fraction of the second nitric acid is 65-70%, the concentrated sulfuric acid, the first nitric acid and the second nitric acid are The volume ratio of nitric acid is (2.5-3.0):(0.8-1.0):(0.4-0.6).

[0083] By...

Embodiment 1

[0095] This embodiment provides a method for extracting crystal grains from a gallium arsenide chip package structure, including the following steps:

[0096] (a) removing part of the substrate in the package structure of the gallium arsenide chip, and thinning the plastic package on the front, so as to preprocess the package structure of the gallium arsenide chip;

[0097] The gallium arsenide chip packaging structure includes a substrate, a die and a plastic package. The die is arranged on the surface of the substrate, and the plastic package encapsulates the die on the surface of the substrate. The substrate is a copper substrate, and the thickness of the copper substrate is is 60 μm, the material of the plastic encapsulation body is epoxy resin, and the encapsulation thickness of the plastic encapsulation body is 600 μm.

[0098] (b) placing the pretreated gallium arsenide chip package structure in 20 mL of the liquid composition for reaction, the reaction time is 15 s, th...

Embodiment 2

[0101] This embodiment provides a method for extracting crystal grains from a gallium arsenide chip package structure, except that the volume ratio of concentrated sulfuric acid, first nitric acid and second nitric acid in the liquid composition is 2.5:0.8:0.6, the remaining steps and process parameters Same as Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method and application for taking crystal grains in a gallium arsenide chip packaging structure, and relates to the technical field of gallium arsenide chips. The method for extracting crystal grains in the gallium arsenide chip packaging structure uses a specific raw material composition and a proportioned liquid mixture to react with the gallium arsenide chip packaging structure, and by controlling the reaction time and temperature, the gallium arsenide chip is realized. The complete removal of the plastic package and the substrate in the packaging structure will not cause damage to the crystal grains, and the complete extraction of the crystal grains will be realized. The present invention provides the application of the method for extracting crystal grains in the above-mentioned gallium arsenide chip packaging structure. In view of the advantages of the above method, the extracted crystal grains will not be corroded and damaged, ensuring the integrity of the crystal grains. Failure analysis of gallium arsenide chips provides the prerequisites. The invention also provides a failure analysis method of the gallium arsenide chip.

Description

technical field [0001] The present invention relates to the technical field of gallium arsenide chips, in particular to a method and application for extracting crystal grains from a package structure of gallium arsenide chips. Background technique [0002] As an important semiconductor material, gallium arsenide (GaAs) has excellent electrical properties such as high saturation electron rate, high electron mobility, and high breakdown voltage. The semiconductor devices made of it have good performance at high frequency, high temperature and low temperature , low noise, strong radiation resistance and other advantages, it is widely used in integrated circuits, light-emitting diodes, semiconductor lasers and solar cells and other fields. [0003] With the continuous improvement of people's requirements for the quality and reliability of GaAs chips, the failure analysis of GaAs chips has become more and more important. Failure analysis can provide the necessary feedback for th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/32G01N21/95
CPCG01N1/32G01N21/9501
Inventor 王仁洲郑朝晖
Owner GIGA FORCE ELECTRONICS CO LTD