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A mini/micro LED chip using Damascus technology and its manufacturing method

A manufacturing method and chip technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of low maintenance costs, and achieve the effects of low cost, improved resolution, and stable process

Active Publication Date: 2022-04-22
南昌凯捷半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the deficiencies of the prior art, the present invention provides a mini / micro LED chip using a Damascus process and a manufacturing method thereof. The manufacturing method adopts a Damascus process to manufacture mini / micro LED pad tin electrodes, which can avoid the use of negative adhesive stripping Or brush solder paste on the package side to make thick electrodes with high precision, which improves the stability of the process and facilitates client applications; the combination of sputtering seed layer and electroplating basically avoids the use of metal vapor deposition machines, without Pollution of vapor deposition machine, low maintenance cost

Method used

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  • A mini/micro LED chip using Damascus technology and its manufacturing method
  • A mini/micro LED chip using Damascus technology and its manufacturing method
  • A mini/micro LED chip using Damascus technology and its manufacturing method

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Embodiment Construction

[0042]The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way serves as any limitation of the application, its application or uses. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0043] In the description of this application, it should be understood that the use of words such as "first" and "second" to define parts is only for the convenience of distinguishing corresponding parts. Therefore, it should not be construed as a limitation of the protection scope of this application.

[0044] In...

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Abstract

The present invention relates to the field of LED technology, in particular to a mini / micro LED chip using a Damascus process and a manufacturing method thereof, the manufacturing method comprising the following steps: depositing a first passivation layer, polishing, and depositing SiN x Corrosion barrier layer, deposition of the second passivation layer, etching wire electrode pattern, pad electrode production, polishing surface electrode, sapphire thinning, final polishing, invisible dicing, splitting, complete chip production. The present invention adopts the damascene method to manufacture mini / micro LED pad tin electrodes, without etching the metal layer, can manufacture thick electrodes, and has high graphic accuracy, and can avoid the use of negative glue peeling or brushing solder paste on the packaging end, improving the process efficiency Stability; the combination of magnetron sputtering seed layer and electroplating can avoid the use of metal vapor deposition machines, there is no problem of contamination of vapor deposition machines and maintenance, and the production cost is low.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a mini / micro LED chip using a damascene process and a manufacturing method thereof. Background technique [0002] The existing mini / micro LED chips usually use Au electrodes in the pad electrode part. This process is the traditional way of LED manufacturing. However, for mini / micro LED chips, thick tin electrodes are usually required at the chip package end, and the thickness usually requires More than 20μm. [0003] At present, there are two ways to realize thick tin electrodes. One is to use traditional negative adhesive stripping technology to make thick tin electrodes on the chip side. This has several disadvantages. One is that it requires very thick negative photoresist, which gives Chip manufacturing brings difficulties. First, the photoresist that can reach such a thickness is very expensive; secondly, the resolution of the negative resist is lower than that of the positive...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/36H01L33/62
CPCH01L33/005H01L33/36H01L33/62H01L2933/0016H01L2933/0066
Inventor 李俊承赵敏博谈凯强刘苏杰王克来白继锋熊珊潘彬王向武
Owner 南昌凯捷半导体科技有限公司
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