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Photocatalysis-assisted tungsten chemical mechanical polishing composition and polishing method

A polishing composition and chemical-mechanical technology, applied in polishing compositions containing abrasives, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as process impact, decomposition failure, wafer scrap, etc., to improve the polishing rate. , the effect of reducing pollution and less pollution

Pending Publication Date: 2022-01-21
博力思(天津)电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the residual metal ions on the surface of the wafer will seriously affect the subsequent process, and even cause the wafer to be scrapped.
In addition, the Fenton reaction between metal ions and hydrogen peroxide in the polishing slurry will lead to its rapid decomposition and failure, making the product unable to be stored for a long time

Method used

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  • Photocatalysis-assisted tungsten chemical mechanical polishing composition and polishing method
  • Photocatalysis-assisted tungsten chemical mechanical polishing composition and polishing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Chelating agent: ethylenediaminetetraacetic acid.

[0031] Surfactant: stearic acid.

[0032] Abrasive: colloidal titanium dioxide: 10%, particle size of titanium dioxide particles: 90nm.

[0033] pH regulator: HNO3

[0034] pH=3

[0035] The composition and weight percentage of the polishing composition are as follows: colloidal titanium dioxide: 10%; chelating agent: 0.1%; surfactant: 0.1%; pH regulator: 0.1%; biocide: 0.1%.

[0036] Corresponding experimental data: polishing conditions: rotating speed of upper and lower throwing heads: 97 / 101rpm; flow rate of polishing composition: 200ml / min; polishing pressure: 1.5psi; power of ultraviolet lamp: 18W. Tungsten removal rate: Depression degree:

Embodiment 2

[0038] The composition and weight percentage of the polishing composition are as follows: colloidal titanium dioxide: 12.5%; chelating agent: 1%; surfactant: 0.1%; pH regulator: 1%; biocide: 1%.

[0039] Corresponding experimental data: polishing conditions: rotating speed of upper and lower throwing heads: 97 / 101rpm; flow rate of polishing composition: 200ml / min; polishing pressure: 1.5psi; power of ultraviolet lamp: 18W. Tungsten removal rate: Depression degree:

Embodiment 3

[0041] The composition and weight percentage of the polishing composition are as follows: colloidal titanium dioxide: 15%; chelating agent: 6%; surfactant: 1%; pH regulator: 2%; biocide: 2%.

[0042] Corresponding experimental data: polishing conditions: rotating speed of upper and lower throwing heads: 97 / 101rpm; flow rate of polishing composition: 200ml / min; polishing pressure: 1.5psi; power of ultraviolet lamp: 18W. Tungsten removal rate: Depression degree:

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Abstract

The invention relates to a photocatalysis-assisted tungsten chemical mechanical polishing composition and a polishing method. The composition comprises a substrate comprising tungsten and a dielectric; a polishing composition with titanium dioxide as a grinding material and without an oxidizing agent; a chemical mechanical polishing pad having a polishing surface; and an ultraviolet light source. Dynamic contact is made at the interface between the chemical mechanical polishing pad and the substrate, and the polishing composition is distributed to the chemical mechanical polishing surface at or near the interface between the chemical mechanical polishing pad and the substrate under ultraviolet irradiation for polishing. The polishing composition does not contain the oxidizing agent, titanium dioxide is used as a grinding material, and according to the polishing method, the polishing rate of tungsten is guaranteed while metal ions are not added, and pollution is less. The invention provides a new thought for tungsten polishing.

Description

technical field [0001] The invention relates to the technical field of tungsten chemical mechanical polishing compositions, in particular to a photocatalytic-assisted tungsten chemical mechanical polishing composition and a polishing method. Background technique [0002] During the fabrication of integrated circuits and other electronic devices, as layers of material are sequentially deposited and removed, the topmost surface of the wafer becomes uneven. In order to facilitate subsequent steps, the wafer needs to be planarized. [0003] Chemical Mechanical Polishing (CMP) is a common technique applied to global or local planarization of wafers. During the CMP process, the wafer is mounted on a carrier assembly in contact with a polishing pad in the CMP equipment, and the carrier assembly provides controlled pressure to the wafer, pressing it against the polishing pad. The wafer and polishing pad move relative to each other under the action of an external driving force. At...

Claims

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Application Information

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IPC IPC(8): H01L21/321C09G1/02
CPCC09G1/02H01L21/3212
Inventor 姜鉴哲王晗笑宋英英张琳付聚三
Owner 博力思(天津)电子科技有限公司
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