Laser fragmentation method for solid material

Abstract

The embodiment of the invention belongs to the technical field of laser fragmentation, and relates to a laser fragmentation method for a solid material. The technical scheme provided by the invention is that the method comprises the following steps: forming a stripping surface in a solid material by using laser; bonding a solid material to the surface of the solid substrate through thermoplastic glue; and separating the solid material along the stripping surface to obtain a thin-layer wafer with a predetermined thickness. The laser is utilized to form the stripping surface in the solid material to be separated, the consistency of the thickness of the thin-layer wafer is ensured, the thermoplastic glue and the solid substrate are adopted to assist in stripping, the stripping process is simple and reliable, the thin-layer wafer obtained after stripping is easily separated from the solid substrate, the production cost is reduced, and the production efficiency is improved.

Description

technical field [0001] The present application relates to the technical field of laser slicing, and more specifically, to a laser slicing method for solid materials. Background technique [0002] In the preparation of integrated circuit industry and LED industry, silicon carbide (SiC), silicon (Si), sapphire (Al2O3), glass and other materials are usually used as substrates for preparing devices. The traditional wafer preparation method is: using a wire saw to cut the cylindrical ingot into pieces, and then go through the subsequent grinding and thinning process to achieve a specific thickness. However, the above slicing method has serious material loss, and the slicing process will cause most (70-80%) of the crystal ingot to be discarded. Especially for high-hardness SiC materials (Mohs hardness 9.5), the wire sawing method not only consumes a lot of material, but also has many problems such as low efficiency, serious tool wear and environmental pollution, which seriously r...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a laser slicing method for solid materials, which solves the problems of low production efficiency, high production cost, and complicated devices in the existing solutions, and uses laser to form a peeling surface inside the solid material to be separated to ensure that the thin-layer wafer The thickness is consistent, and the thin-layer wafer obtained after peeling is easy to separate from the solid substrate, which reduces production costs and improves production efficiency

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