Mini/micro LED with Ag reflector and manufacturing method of mini/micro LED with Ag reflector

A manufacturing method and reflector technology, applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as complex time-consuming, high cost, and difficult to guarantee quality, and achieve good reflection effect, stable quality, and improved brightness

Active Publication Date: 2022-01-28
南昌凯捷半导体科技有限公司
View PDF15 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this structure can achieve relatively good reflectivity, it still cannot meet the current requirements. In order to achieve a better reflective effect, more than 40 pairs of film layers need to be installed, which requires the overall thickness to be more than 4 microns, and the overall production The process is also very time consuming
At the same time, due to the need to make electrodes on the surface, it is necessary to etch the thick film of the laminated cycle structure, which is difficult. Moreover, due to the small size of the mini / micro LED chip, the hole diameter of the electrode is also limited by the overall chip design. It is very small, which further increases the difficulty of production
However, this kind of laminated cycle structure thick film is not only difficult to manufacture, but also complicated and time-consuming, making it difficult to guarantee the quality and high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Mini/micro LED with Ag reflector and manufacturing method of mini/micro LED with Ag reflector
  • Mini/micro LED with Ag reflector and manufacturing method of mini/micro LED with Ag reflector
  • Mini/micro LED with Ag reflector and manufacturing method of mini/micro LED with Ag reflector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. The following description of at least one exemplary embodiment is merely illustrative in nature and in no way serves as any limitation of the application, its application or uses. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

[0046] In the description of this application, it should be understood that the use of words such as "first" and "second" to define parts is only for the convenience of distinguishing corresponding parts. Therefore, it should not be construed as a limitation of the protection scope of this application.

[0047] I...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
etching depthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of LEDs and relates to a mini / micro LED with an Ag reflector and a manufacturing method of the mini / micro LED with the Ag reflector. The mini / micro LED comprises a sapphire substrate, an LED epitaxial layer, a P electrode, an N electrode, a first passivation layer, the Ag reflector, a second passivation layer and a bonding pad electrode; the Ag reflector is embedded on the first passivation layer through a Damascus process; and the second passivation layer is deposited on the surfaces of the Ag reflector the first passivation layer and covers the Ag reflector. According to the mini / micro LED, the Ag reflector is introduced through the Damascus technology, the coverage area and thickness of a Ag mirror film on the surface of a chip can be accurately controlled, the reflectivity is greatly improved; the Ag reflector is manufactured between SiO2 layers, an all-dimensional reflecting layer is formed, the good reflecting effect on incident light of different angles is achieved; and the Ag reflector is effectively protected by the two SiO2 layers, the oxidation or corrosion of the Ag reflector is avoided, and the quality of the Ag reflector is stable.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a mini / micro LED with an Ag reflector and a manufacturing method thereof. Background technique [0002] For existing mini / micro LED chips, surface reflection generally adopts evaporation DBR (distributed Bragg reflector) reflective layer technology to improve reflectivity, usually using TiO 2 with SiO 2 Laminated loop structure. Although this structure can achieve relatively good reflectivity, it still cannot meet the current requirements. In order to achieve a better reflective effect, more than 40 pairs of film layers need to be installed, which requires the overall thickness to be more than 4 microns, and the overall production The process is also very time consuming. At the same time, due to the need to make electrodes on the surface, it is necessary to etch the thick film of the laminated cycle structure, which is difficult. Moreover, due to the small size of the mini / micro ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/46H01L33/00
CPCH01L33/46H01L33/0062H01L2933/0025
Inventor 李俊承赵敏博谈凯强刘苏杰王克来白继锋熊珊潘彬王向武
Owner 南昌凯捷半导体科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products