Controllable metasurface structure based on phase change material and preparation method of controllable metasurface structure

A phase change material and metasurface technology, applied in the field of microelectronics, can solve problems such as limited operating time and complicated control operation, and achieve the effect of small size and thin thickness

Pending Publication Date: 2022-02-01
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

[0004] In view of the defects of the prior art, the object of the present invention is to provide a controllable metasurface structure based on phase change materials and its preparation method, by setting electrode layers above and below the metasurface unit capable of phase transition under the action of voltage, to realize The electrical controllability of the metasurface structure aims to solve the problem that the existing metasurfaces are based on phase change materials that undergo phase change under heating or laser conditions, resulting in complex, limited and long-term control operations

Method used

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  • Controllable metasurface structure based on phase change material and preparation method of controllable metasurface structure
  • Controllable metasurface structure based on phase change material and preparation method of controllable metasurface structure
  • Controllable metasurface structure based on phase change material and preparation method of controllable metasurface structure

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preparation example Construction

[0048] On the other hand, if Figure 4 As shown, the present invention provides a method for preparing a controllable metasurface structure based on phase change materials, in which microelectrode posts 302 are located between the top electrode layer 400 and the metasurface unit 301, and the preparation method includes the following steps :

[0049] S1-1. Prepare the bottom electrode layer 200 on the substrate 100 . Specifically, the bottom electrode pattern is first designed on the dry and clean substrate 100 by ultraviolet lithography, electron beam lithography or mask method, and then magnetron sputtering, chemical vapor deposition (CVD), chemical vapor phase The bottom electrode material is prepared by transmission (CVT), molecular beam epitaxy (MBE) or electron beam grazing angle deposition (GLAD).

[0050] S1-2. Prepare multiple metasurface units 301 on the bottom electrode layer 200 . Specifically, the metasurface pattern is first designed on the bottom electrode lay...

Embodiment 1

[0071] This embodiment provides a terahertz wave modulator based on a metasurface structure, such as Figure 5 As shown, the device is sequentially arranged from bottom to top: a substrate 100 , a bottom electrode 200 , a transparent insulating layer 300 and a top electrode layer 400 . A plurality of array-arranged metasurface units 301 and a plurality of microelectrode posts 302 are arranged in the transparent insulating layer 300, Figure 5 4 metasurface units are shown in , the upper surface of each metasurface unit 301 is connected to the lower surface of a plurality of microelectrode columns 302, the microelectrode columns 302 on each metasurface unit 301 are arranged in an array, each metasurface unit 301 The lower surface is connected to the bottom electrode 200 , and the upper surface of each microelectrode column 302 is connected to the top electrode layer 400 . Both the metasurface unit 301 and the microelectrode column 302 are cylindrical, the radius of the metasur...

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Abstract

The invention belongs to the technical field of microelectronics, and discloses a controllable metasurface structure based on a phase change material and a preparation method of the controllable metasurface structure. The structure comprises a substrate, a bottom electrode layer, a transparent insulating layer and a top electrode layer sequentially distributed from bottom to top; a metasurface unit and a plurality of microelectrode columns are arranged in the transparent insulating layer; the upper surface and the lower surface of the metasurface unit are connected with the microelectrode columns, or any one of the upper surface and the lower surface of the metasurface unit is connected with the microelectrode columns, and the other surface is connected with the bottom electrode layer or the top electrode layer; one end of each microelectrode column is connected with the metasurface unit, and the other end of each microelectrode column is connected with the bottom electrode layer or the top electrode layer; under the action of different pulse currents, the metasurface units can generate reversible phase changes of different degrees, so that the electromagnetic wave transmittance of the controllable metasurface structure is changed. The phase change degree of the phase change material in the metasurface structure is accurately controlled by accurately controlling applied current, so that the function of accurately modulating the optical performance of a device based on the metasurface is realized.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a controllable metasurface structure based on a phase change material and a preparation method thereof. Background technique [0002] A metasurface is a two-dimensional simplified version of a metamaterial, which can precisely control the amplitude, polarization, phase, frequency, etc. of electromagnetic waves at the sub-wavelength scale through scattering structural units, and obtain any form of electromagnetic field distribution. The so-called metamaterial is a material that does not exist in nature. By artificially designing the material composition and arrangement of the micro-nano structure inside the material, some conventional materials can achieve any physical and chemical properties required by physics. Its application range can almost cover The entire electromagnetic spectrum, from ultraviolet to microwave, has driven the innovation of optical d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/821H10N70/841H10N70/061
Inventor 徐明王俊钦沈颖华缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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