Light emitting diode and manufacturing method thereof

Abstract

Disclosed are a light emitting diode and a manufacturing method thereof. The light emitting diode comprisres a substrate including a first surface and a second surface opposite to each other; an epitaxial layer located on the first surface of the substrate; and a first dielectric layer located on the second surface of the substrate and at least covering parts of the second surface of the substrate, wherein the refractive index of the first dielectric layer is between the refractive index of the substrate and the refractive index of the air. The first dielectric layer is formed on the second surface of the substrate, and the refractive index of the first dielectric layer is between the refractive index of the substrate and the refractive index of air, so that the refractive index of the light emitting diode from the substrate to the air is gradually reduced through the first dielectric layer, the total reflection effect is reduced, the light extraction efficiency of the light emitting diode is effectively improved, and the optical performance index of the light emitting diode is further improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and more specifically relates to a light emitting diode and a manufacturing method thereof. Background technique [0002] A light emitting diode (LED, Light Emitting Diode), as a light emitting element, is often used in a display device, and emits energy by recombining electrons and holes to emit light. Light-emitting diodes can be used as backlights for large-size display screens, smartphones, automotive panels, and notebook computers using white light packaging, or can be combined with red, green, and blue (RGB) LED chips to achieve high CRI. show. [0003] The difference in refractive index between the substrate and air in light-emitting diodes is large, resulting in serious total reflection. At present, the surface of the substrate with a certain roughness can be obtained by using the backside thinning and coarse grinding process, but the above-mentioned means have a limited e...

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Problems solved by technology

[0003] The difference in refractive index between the substrate and air in light-emitting diodes is large, resulting in serious total reflection

At present, the backside thinning and coarse grinding process is often used to obtain a substrate surface with a certain roughness, but the above-mentioned methods have a limited effect on improving the light extraction of light-emitting diodes.

In addition, those skilled in the art also use an etching process to pattern the surface of the substrate to reduce the total reflection effect and improve the forward light emission of the light emitting diode. However, due to the high hardness of the substrate and stable chemical properties, it is difficult to achieve low-cost and high-efficiency. Technical solutions

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