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Deuterium-containing films

A deuterium and film deposition technology, applied in coating, gaseous chemical plating, discharge tube, etc.

Pending Publication Date: 2022-02-11
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

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However, driving more capacity is not without its problems

Method used

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  • Deuterium-containing films
  • Deuterium-containing films
  • Deuterium-containing films

Examples

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Embodiment Construction

[0016] Before describing several example embodiments of the disclosure, it is to be understood that the disclosure is not limited to the details of architecture or process steps set forth in the ensuing specification. The disclosure is capable of other embodiments and of being practiced or carried out in various ways.

[0017] As used herein, the term "about" means approximately or approximately, and in the context of a stated value or range means a variation of ±15% or less of that value. For example, values ​​that differ by ±14%, ±10%, ±5%, ±2%, or ±1% would satisfy the definition of about.

[0018] As used in this specification and the appended claims, the term "substrate" or "wafer" refers to a surface or portion of a surface on which a process is performed. Those skilled in the art will also understand that a reference to a substrate may only refer to a portion of such a substrate, unless the context clearly indicates otherwise. Furthermore, reference to depositing on a...

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Abstract

Films are modified to include deuterium in an inductive high density plasma chamber. Chamber hardware designs enable tunability of the deuterium concentration uniformity in the film across a substrate. Manufacturing of solid state electronic devices includes integrated process flows to modify a film that is substantially free of hydrogen and deuterium to include deuterium.

Description

technical field [0001] The present disclosure generally relates to electronic devices. More specifically, embodiments of the present invention relate to the use of deuterium-containing membranes to enhance the performance and reliability of electronic devices. Background technique [0002] Integrated circuits have evolved into complex devices that can include millions of transistors, capacitors, and resistors on a single chip. During the evolution of integrated circuits, functional density (i.e., the number of interconnected elements per chip area) has gradually increased while geometry size (i.e., the smallest feature (or line segment) that can be created using a fabrication process) has decreased . [0003] Reducing the size of integrated circuits (ICs) results in improved performance, increased capacity, and / or reduced cost. Each scaling down requires more sophisticated technology to form ICs. For example, shrinking transistor size allows for the incorporation of incr...

Claims

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Application Information

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IPC IPC(8): C23C16/24C23C16/30C23C16/44C23C16/455C23C16/52H01J37/317H01J37/32H01L21/30
CPCC23C16/24C23C16/44C23C16/45525C23C16/52C23C16/30H01J37/3178H01J37/32724H01J37/32449H01J37/32009H01L21/30H01J2237/317H01J2237/3321C23C16/401C23C16/56C23C16/46C23C16/345C23C16/325C23C16/50C23C16/455H01L21/76826H01L21/3115H01L33/58H01L33/44H01L21/02321H01L21/0234H01L31/0264H01L21/3003C23C16/28C23C16/45548C23C16/45538H01L21/76856H01L21/265H01L21/2236
Inventor S·M·佐伊特M·M·朴H·M·勒C-C·庄
Owner APPLIED MATERIALS INC