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Method for determining metal electron trajectory depth based on pumping probe analysis

A technology of pump detection and electronics, which is applied in the direction of measuring devices, instruments, and optical devices, can solve the problems of large errors in the depth of electronic ballistics, and the scientific significance of test conditions is not rigorous, etc., to achieve accurate determination and scientific and rigorous analysis methods.

Active Publication Date: 2022-02-15
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Claims
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Problems solved by technology

[0004]The purpose of the present invention is to solve the problem that the traditional test method determines the electronic ballistic depth error is relatively large, and the scientific significance of the test conditions is not rigorous, and provides a pump-based detection The Method of Analyzing and Determining the Ballistic Depth of Metal Electron

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  • Method for determining metal electron trajectory depth based on pumping probe analysis
  • Method for determining metal electron trajectory depth based on pumping probe analysis
  • Method for determining metal electron trajectory depth based on pumping probe analysis

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Embodiment 1

[0022] Copper films with a thickness of 20nm, 40nm, 60nm, 80nm, and 100nm were deposited on a quartz substrate by magnetron sputtering. Before depositing the film, the substrate was ultrasonically cleaned with acetone, isopropanol, and deionized water for 15 minutes each with a nitrogen gun. Blow off residual moisture to ensure uniform and pure film deposition. During the deposition process, the step meter is used to detect and ensure that the thickness deviation is less than 5%.

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Abstract

The invention relates to a method for determining a metal electron trajectory depth based on pumping probe analysis, and belongs to the field of ultrafast detection. The method comprises the following steps: carrying out a film thickness dependence test on a metal film by adopting super-continuous white light pumping detection, and then selecting peak signal dynamics to carry out deconvolution three-index fitting to obtain time constants corresponding to electron-electron scattering, electron-phonon scattering and thermal diffusion processes respectively; and analyzing and determining the electron trajectory depth through the film thickness dependence trend of the electron-electron scattering time constant. The method provides a simple, accurate and rigorous test analysis scheme for determining the metal electron trajectory depth under various conditions, and has universality for various metals.

Description

technical field [0001] The invention relates to a method for determining the ballistic depth of metal electrons based on pump detection analysis, which belongs to the field of ultrafast detection. Background technique [0002] Metals generate non-thermal electrons out of the Fermi-Dirac distribution after being excited, and have great potential in the field of ultrafast optical devices such as all-optical modulators. For the detection of non-thermal electron ballistic depth, it will provide great guiding significance for the correction and development of theoretical models and the design of metal-based ultrafast optical devices. However, since electron ballistic motion and electro-electric scattering are simultaneous and competing processes, and the scale of electro-electric scattering is usually on the order of hundreds of fs, while the velocity of electron ballistic motion is close to the Fermi velocity of about 10 6 m / s, so the electron ballistic depth is usually around ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01B11/06
CPCG01B11/06
Inventor 姜澜杨飞朱彤高国权王猛猛
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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