HgCdTe planar heterojunction detector and preparation method thereof
A heterojunction detector, mercury cadmium telluride technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as surface leakage, difficult mesa preparation, device failure, etc.
Pending Publication Date: 2022-03-04
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology
[0007] However, compared with the planar injection junction, the mesa preparation process of the mesa heterojunction device is more difficult, mainly reflected in the unavoidable damage to the HgCdTe material during the mesa preparation process, and the passivation layer covering the sidewall of the mesa. Worse than plane coverage, it is very easy to cause surface leakage and cause device failure
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[0069] The method for preparing the HgCdTe planar heterojunction detector 100 provided in the embodiment of the present invention is used to prepare the HgCdTe planar heterojunction detector 100 in some embodiments of the present invention, and the method includes:
[0070] S100: if image 3 As shown, on the substrate material layer, an n-type absorption layer and a p-type cap layer are grown successively.
[0071] S200: if Figure 4 As shown, photolithography is performed on the p-type cap layer, the photoresist covers the pixel area, and the isolation area leaks out after development.
[0072] S300: if Figure 5 As shown, after photolithography, boron ions are used for ion implantation. After implantation, the photoresist is removed and annealed, so that the implanted ions or the defects caused by ions form n-type doping to form an n-type implantation region, and through the n-type implantation region in the p The orthographic projection direction of the p-type cap layer ...
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Abstract
The invention discloses a mercury cadmium telluride planar heterojunction detector and a preparation method, the detector comprises a substrate material layer, an n-type absorption layer, a p-type cap layer, a passivation layer and a contact electrode layer which are sequentially stacked, the p-type cap layer is provided with an n-type injection region, and the p-type cap layer is separated by the n-type injection region in the orthographic projection direction of the p-type cap layer to become independent pixels; the passivation layer covers at least partial areas of the p-type cap layer and the n-type injection region in the orthographic projection direction, and the part, not covering the p-type cap layer, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type cap layer, and the orthographic projection area of the contact electrode layer is larger than the area of the contact hole. According to the mercury-cadmium-telluride planar heterojunction detector provided by the embodiment of the invention, the mercury-cadmium-telluride heterojunction material is isolated into independent pixels by utilizing n-type injection, so that a p-on-n heterojunction device with a mercury-cadmium-telluride planar structure is realized.
Description
technical field [0001] The invention relates to the technical field of mercury cadmium telluride infrared detectors, in particular to a mercury cadmium telluride planar heterojunction detector and a manufacturing method. Background technique [0002] The mercury cadmium telluride infrared detector uses Hg1-xCdxTe material, which can adjust the absorption wavelength by adjusting the composition (x value), and the detector has high quantum efficiency and good performance, and has become an important material for high-performance cooling infrared detectors. After decades of development, infrared detectors have developed to the third generation, further expanding the performance and detection capabilities of infrared devices in the direction of large area arrays, long wavelengths, dual-multicolor devices, and high-temperature operating devices. Among them, for long-wavelength devices and high-temperature operating devices, the main factor that limits the performance of the devic...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L31/109H01L31/0296H01L31/18
CPCH01L31/02966H01L31/1832H01L31/109Y02P70/50
Inventor 刘世光张轶谭振田震
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP